Planarization of metal container structures

Abstract

A conductive material is provided in an opening formed in an insulative material. The process involves first forming a conductive material over at least a portion of the opening and over at least a portion of the insulative material which is outside of the opening. Next, a metal-containing fill material is formed over at least a portion of the conductive material which is inside the opening and which is also over the insulative material outside of the opening. The metal-containing material at least partially fills the opening. At least a portion of both the metal-containing fill material and the conductive material outside of the opening is then removed. Thereafter, at least a portion of the metal-containing fill material which is inside the opening is then removed.

1 .- 95 . (canceled)  
   
   
       96 . A method of stabilizing a conductive material within an opening, comprising: 
 forming a conductive material in an opening and over at least a portion of an insulative material outside of said opening;    forming a stabilizing metal-containing fill material over at least a portion of said conductive material such that at least some of said stabilizing metal-containing fill material is located in said opening; and    removing substantially all of said stabilizing metal-containing fill material from said opening while maintaining said conductive material substantially undeformed.    
   
   
       97 . The method of  claim 96 , wherein said stabilizing metal-containing fill material is a tungsten-containing fill material.  
   
   
       98 . The method of  claim 96 , wherein said stabilizing metal-containing fill material is harder than said conductive material.  
   
   
       99 . The method of  claim 96 , wherein said removing step is performed by chemical mechanical planarization.  
   
   
       100 . The method of  claim 96 , wherein said conductive material has a top edge portion once formed over said insulative material, and said forming of said stabilizing metal-containing fill material is performed so as to substantially cover said top edge portion.  
   
   
       101 . The method of  claim 96 , wherein after said removal of said stabilizing metal-containing fill material, said conductive material is substantially co-planar with a top surface portion of said insulative material.  
   
   
       102 . A method of stabilizing a conductive material while forming a bottom electrode of a capacitor, comprising: 
 providing a conductive material over an insulative material within an opening and outside of said opening;    providing a stabilizing metal-containing fill material over at least a portion of said conductive material which is inside said opening and which is over said insulative material;    removing substantially all of said stabilizing metal-containing fill material from inside said opening while maintaining said conductive material substantially undeformed; and    forming a capacitor having said conductive material as its bottom electrode.    
   
   
       103 . The method of  claim 102 , wherein said stabilizing metal-containing fill material is tungsten or tungsten nitride and is provided to be substantially co-extensive with said conductive material.  
   
   
       104 . The method of  claim 102 , wherein said stabilizing metal-containing fill material is harder than said conductive material.  
   
   
       105 . The method of  claim 102 , wherein said removing step is performed by chemical mechanical planarization.  
   
   
       106 . The method of  claim 102 , wherein said conductive material is a bottom electrode of a container capacitor.  
   
   
       107 . The method of  claim 102 , wherein said stabilizing metal-containing fill material is titanium nitride.  
   
   
       108 . The method of  claim 102 , wherein said conductive material is provided by chemical vapor deposition or low pressure chemical vapor deposition.  
   
   
       109 . A method of providing stabilizing a conductive material in an opening provided in an insulative material over a substrate, comprising: 
 forming an opening in an insulative material;    depositing a conductive material in at least a part of an interior of said opening and over at least a portion of the insulative material outside of said opening;    depositing a stabilizing tungsten-containing fill material over at least a portion of said conductive material which is in said interior of said opening and which is over said insulative material outside of said opening, wherein said stabilizing tungsten-containing fill material at least partially fills said opening;    removing at least a portion of said stabilizing tungsten-containing fill material and said conductive material which is over said insulative material outside of said opening; and    removing substantially all of said stabilizing tungsten-containing fill material from said opening while maintaining said conductive material substantially undeformed.    
   
   
       110 . The method of  claim 109 , wherein said stabilizing metal-containing fill material is harder than said conductive material.  
   
   
       111 . The method of  claim 109 , wherein said removing steps are performed by chemical mechanical planarization.  
   
   
       112 . The method of  claim 111 , wherein said planarization is performed so that a top surface of said conductive material is substantially co-planar with a top surface of said insulative material.  
   
   
       113 . The method of  claim 109 , wherein said conductive material has a top edge portion once formed over said insulative material, and said depositing of said stabilizing metal-containing fill material is performed so as to substantially cover said top edge portion.  
   
   
       114 . The method of  claim 109 , further comprising forming a capacitor wherein said conductive material becomes an electrode of said capacitor.  
   
   
       115 . The method of  claim 109 , wherein said stabilizing tungsten-containing fill material is formed so as to substantially fill said opening.