Inventor · disambiguated record
John M. Drynan
Also filed as: DRYNAN JOHN M · DRYNAN JOHN MARK
33 granted patents·3 pending applications·744 citations·filing 1996–2014
98Inventor score
Top patents by PatentIndex Score
36 records- 0195US7321150B2Semiconductor device precursor structures to a double-sided capacitor or a contactMICRON TECHNOLOGY INC·Filed 2005·Granted Jan 22, 2008·39 cites·5 claims
- 0295US7268039B2Method of forming a contact using a sacrificial structureMICRON TECHNOLOGY INC·Filed 2007·Granted Sep 11, 2007·40 cites·9 claims
- 0394US7273779B2Method of forming a double-sided capacitorMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 25, 2007·31 cites·19 claims
- 0493US6524912B1Planarization of metal container structuresMICRON TECHNOLOGY INC·Filed 2000·Granted Feb 25, 2003·58 cites·74 claims
- 0593US6511896B2Method of etching a substantially amorphous TA2O5 comprising layerMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 28, 2003·48 cites·13 claims
- 0691US6617250B2Methods of depositing a layer comprising tungsten and methods of forming a transistor gate lineMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·38 cites·40 claims
- 0789US6713378B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 30, 2004·41 cites·46 claims
- 0889US6511879B1Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2000·Granted Jan 28, 2003·33 cites·48 claims
- 0989US5929524ASemiconductor device having ring-shaped conductive spacer which connects wiring layersNEC CORP·Filed 1996·Granted Jul 27, 1999·98 cites·13 claims
- 1088US5953609AMethod of manufacturing a semiconductor memory deviceNEC CORP·Filed 1997·Granted Sep 14, 1999·54 cites·30 claims
- 1186US7573087B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 11, 2009·8 cites·9 claims
- 1286US6962846B2Methods of forming a double-sided capacitor or a contact using a sacrificial structureMICRON TECHNOLOGY INC·Filed 2003·Granted Nov 8, 2005·34 cites·20 claims
- 1386US5939746ASemiconductor memory device and manufacturing method of the sameNEC CORP·Filed 1996·Granted Aug 17, 1999·51 cites·23 claims
- 1479US6781182B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·15 cites·9 claims
- 1578US7888774B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2009·Granted Feb 15, 2011·4 cites·8 claims
- 1675US6645846B2Methods of forming conductive contacts to conductive structuresMICRON TECHNOLOGY INC·Filed 2001·Granted Nov 11, 2003·15 cites·42 claims
- 1774US7019347B2Dynamic random access memory circuitry comprising insulative collarsMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 28, 2006·4 cites·10 claims
- 1874US6969882B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 29, 2005·11 cites·14 claims
- 1969US7061115B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 13, 2006·12 cites·28 claims
- 2069US7053462B2Planarization of metal container structuresMICRON TECHNOLOGY INC·Filed 2002·Granted May 30, 2006·9 cites·15 claims
- 2167US6001734AFormation method of contact/ through holeNEC CORP·Filed 1997·Granted Dec 14, 1999·34 cites·8 claims
- 2266US7285814B2Dynamic random access memory circuitry and integrated circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted Oct 23, 2007·2 cites·26 claims
- 2364US6197682B1Structure of a contact hole in a semiconductor device and method of manufacturing the sameNEC CORP·Filed 1999·Granted Mar 6, 2001·26 cites·7 claims
- 2461US9123786B2Interconnect line selectively isolated from an underlying contact plugMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 1, 2015·0 cites·12 claims
- 2558US6096632AFabrication method of semiconductor device using CMP processNEC CORP·Filed 1998·Granted Aug 1, 2000·22 cites·15 claims
- 2656US6767806B2Method of forming a patterned substantially crystalline ta2o5 comprising material, and method of forming a capacitor having a capacitor dielectric region comprising substantially crystalline ta2o5 comprising materialMICRON TECHNOLOGY INC·Filed 2002·Granted Jul 27, 2004·3 cites·30 claims
- 2755US6861713B2Integrated circuitry comprising insulative collars and integrated circuitry comprising sidewall spacers over a conductive line projecting outwardly from a first insulative materialMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 1, 2005·4 cites·12 claims
- 2850US7535112B2Semiconductor constructions comprising multi-level patterns of radiation-imageable materialMICRON TECHNOLOGY INC·Filed 2006·Granted May 19, 2009·0 cites·11 claims
- 2949US8796815B2Interconnect line selectively isolated from an underlying contact plugDRYNAN JOHN M·Filed 2011·Granted Aug 5, 2014·0 cites·8 claims
- 3049US7517786B2Methods of forming wire bonds for semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2006·Granted Apr 14, 2009·0 cites·6 claims
- 3145US2006170025A1Planarization of metal container structuresDRYNAN JOHN M·Filed 2006·Application pending·0 cites
- 3243US2006033123A1Interconnect line selectively isolated from an underlying contact plugDRYNAN JOHN M·Filed 2005·Application pending·0 cites
- 3342US7262123B2Methods of forming wire bonds for semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2004·Granted Aug 28, 2007·0 cites·28 claims
- 3439US2005026412A1Interconnect line selectively isolated from an underlying contact plugFiled 2004·Application pending·0 cites
- 3536US6054771AInterconnection system in a semiconductor deviceNEC CORP·Filed 1998·Granted Apr 25, 2000·5 cites·4 claims
- 3636US6020642AInterconnection system in a semiconductor deviceNEC CORP·Filed 1998·Granted Feb 1, 2000·5 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →