Method for the formation of a metal film

Abstract

A method for forming a metal film, including bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor composed of a metallic component contained in the filament and the halogen contained in the raw material gas, producing an atomic reducing gas by heating a reducing gas to a high temperature, passing the precursor through the atomic reducing gas to remove the halogen from the precursor, and directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.

1 . A method for forming a metal film, comprising: 
 bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor comprising a metallic component contained in the filament and the halogen contained in the raw material gas;    producing an atomic reducing gas by heating a reducing gas to a high temperature;    passing the precursor through the atomic reducing gas to remove the halogen from the precursor; and    directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.    
   
   
       2 . A method for forming a metal film as claimed in  claim 1 , wherein the bringing of the raw material gas into contact with the filament comprises bubbling a carrier gas through a liquid organometallic complex and vaporizing the organometallic complex.  
   
   
       3 . A method for forming a metal film, comprising: 
 bringing a raw material gas containing a halogen into contact with a hot metallic filament, thereby etching the filament with the raw material gas to produce a precursor comprising a metallic component contained in the filament and the halogen contained in the raw material gas;    passing a high-frequency electric current through an electrode having openings that allow the precursor to flow therethrough, thereby converting a reducing gas into a plasma to generate a reducing gas plasma;    passing the precursor through the plasma to remove the halogen from the precursor; and    directing the resulting metallic ion or neutral metal onto a substrate to form a thin metal film on the substrate.    
   
   
       4 . A method for forming a metal film as claimed in  claim 3 , wherein the bringing of the raw material gas into contact with the filament comprises bubbling a carrier gas through a liquid organometallic complex and vaporizing the organometallic complex.  
   
   
       5 . A method for forming a metal film, comprising: 
 reacting chlorine with a metallic plate within a chamber to produce a precursor comprising a metallic component and chlorine;    removing chlorine from the precursor by reduction; and    directing the resulting metallic ion onto a substrate within the chamber to form a metal film on the substrate,    wherein the chamber is heated to a predetermined temperature so as to prevent the precursor from depositing on the inner wall of the chamber.    
   
   
       6 . A method for forming a metal film as claimed in  claim 5 , wherein the metallic plate is made of copper, so that Cu x Cl y  is produced as the precursor.  
   
   
       7 . A method for forming a metallic film as claimed in  claim 6 , wherein the predetermined temperature to which the metallic plate is heated is in the range of 200 to 800° C.  
   
   
       8 . A method for forming a metal film, comprising: 
 reacting chlorine with a metallic plate within a chamber to produce a precursor comprising a metallic component and chlorine;    removing chlorine from the precursor by reduction; and    directing the resulting metallic ion onto a substrate within the chamber to form a metal film on the substrate,    wherein the metallic plate is heated to a predetermined temperature so as to make the precursor easy to reduce.    
   
   
       9 . A method for forming a metal film as claimed in  claim 8 , wherein the metal plate is made of copper, so that Cu x Cl y  is produced as the precursor.  
   
   
       10 . A method for forming a metal film as claimed in  claim 9 , wherein the predetermined temperature to which the metallic plate is heated is in the range of 200 to 800° C.  
   
   
       11 . A method for forming a metal film, comprising: 
 reacting chlorine with a metallic plate within a chamber to produce a precursor comprising a metallic component and chlorine;    removing chlorine from the precursor by reduction; and    directing the resulting metallic ion onto a substrate within the chamber to form a metal film on the substrate,    wherein the chamber is heated to a predetermined temperature so as to prevent the precursor from depositing on the inner wall of the chamber and the metallic plate is heated to a predetermined temperature so as to make the precursor easy to reduce.    
   
   
       12 . A method for forming a metal film as claimed in  claim 11 , wherein the metallic plate is made of copper, so that Cu x Cl y  is produced as the precursor.  
   
   
       13 . A method for forming a metallic film as claimed in  claim 12 , wherein the predetermined temperature to which the metallic plate is heated is in the range of 200 to 800° C.