Inventor · disambiguated record
Toshihiko Nishimori
Also filed as: NISHIMORI TOSHIHIKO
8 granted patents·19 pending applications·164 citations·filing 2001–2011
87Inventor score
Files withMITSUBISHI HEAVY IND LTD12CANON ANELVA CORP6SAKAMOTO HITOSHI4KAFUKU HIDETAKA2PHYZCHEMIX CORP2
Top patents by PatentIndex Score
27 records- 0196US7977243B2Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusCANON ANELVA CORP·Filed 2010·Granted Jul 12, 2011·37 cites·7 claims
- 0296US6656540B2Method for forming metallic film and apparatus for forming the sameMITSUBISHI HEAVY IND LTD·Filed 2001·Granted Dec 2, 2003·105 cites·21 claims
- 0375US7262500B2Interconnection structurePHYZCHEMIX CORP·Filed 2005·Granted Aug 28, 2007·5 cites·6 claims
- 0471US7923374B2Method and apparatus for production of metal film or the likeCANON ANELVA CORP·Filed 2009·Granted Apr 12, 2011·2 cites·5 claims
- 0567US7208421B2Method and apparatus for production of metal film or the likeMITSUBISHI HEAVY IND LTD·Filed 2003·Granted Apr 24, 2007·8 cites·18 claims
- 0666US8288294B2Insulating film for semiconductor device, process and apparatus for producing insulating film for semiconductor device, semiconductor device, and process for producing the semiconductor deviceKAFUKU HIDETAKA·Filed 2009·Granted Oct 16, 2012·4 cites·14 claims
- 0765US7659209B2Barrier metal film production methodCANON ANELVA CORP·Filed 2007·Granted Feb 9, 2010·2 cites·2 claims
- 0861US7972946B2Plasma treatment method and plasma treatment deviceMITSUBISHI HEAVY IND LTD·Filed 2007·Granted Jul 5, 2011·1 cites·10 claims
- 0959US2010047471A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 1058US2010040802A1Method and apparatus for production of metal film or the likeCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 1157US2009311866A1Method and apparatus for production of metal film or the likeCANON ANELVA CORP·Filed 2009·Application pending·0 cites
- 1253US2007117363A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusSAKAMOTO HITOSHI·Filed 2006·Application pending·0 cites
- 1353US2009095425A1Apparatus for the formation of a metal filmPHYZCHEMIX CORP·Filed 2008·Application pending·0 cites
- 1453US2007141274A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusSAKAMOTO HITOSHI·Filed 2006·Application pending·0 cites
- 1553US2007087577A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusSAKAMOTO HITOSHI·Filed 2006·Application pending·0 cites
- 1652US2006191481A1Apparatus for the formation of a metal filmMITSUBISHI HEAVY IND LTD·Filed 2006·Application pending·0 cites
- 1752US2006177583A1Method for the formation of a metal filmMITSUBISHI HEAVY IND LTD·Filed 2006·Application pending·0 cites
- 1852US2006191477A1Apparatus for the formation of a metal filmMITSUBISHI HEAVY IND LTD·Filed 2006·Application pending·0 cites
- 1951US2006054593A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusSAKAMOTO HITOSHI·Filed 2005·Application pending·0 cites
- 2045US2010181654A1Manufacturing method of semiconductor device, insulating film for semiconductor device, and manufacturing apparatus of the sameMITSUBISHI HEAVY IND LTD·Filed 2009·Application pending·0 cites
- 2143US2004091636A1Methods and apparatus for the formation of a metal filmMITSUBISHI HEAVY IND LTD·Filed 2003·Application pending·0 cites
- 2241US2003091739A1Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatusFiled 2002·Application pending·0 cites
- 2339US2007107843A1Plasma processing apparatusMITSUBISHI HEAVY IND LTD·Filed 2004·Application pending·0 cites
- 2439US2004058199A1Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatusMITSUBISHI HEAVY IND LTD·Filed 2003·Application pending·0 cites
- 2537US2002000556A1Hexagonal boron nitride film with low dielectric constant, layer dielectric film and method of production thereof, and plasma CVD apparatusMITSUBISHI HEAVY IND LTD·Filed 2001·Application pending·0 cites
- 2636US2013037850A1Semiconductor light-emitting element, protective film of semiconductor light-emitting element, and method for fabricating sameMITSUBISHI HEAVY IND LTD·Filed 2011·Application pending·0 cites
- 2731US2013049063A1Semiconductor light-emitting element, protective film for semiconductor light-emitting element, and process for production of the protective filmKAFUKU HIDETAKA·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →