Apparatus for the formation of a metal film

Abstract

An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.

1 . An apparatus for forming a metal film, comprising: 
 a reaction vessel configured to house a substrate;    a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel;    a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate; and    a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.    
   
   
       2 . An apparatus for forming a metal film, comprising: 
 a reaction vessel configured to house a substrate;    a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel; and    an electrode for generating a plasma from a reducing gas fed into the reaction vessel by applying high-frequency electric power thereto.