Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

Abstract

A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

1 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    exciting a nitrogen-containing gas in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride by the reduction reaction as a film on the substrate.    
   
   
       2 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    exciting a nitrogen-containing gas in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride by the reduction reaction as a film on the substrate; and    after film formation of the metal nitride, stopping supply of the nitrogen-containing gas, and making the temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor by the reduction reaction as a film on the metal nitride on the substrate.