US2010040802A1PendingUtilityA1

Method and apparatus for production of metal film or the like

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Assignee: CANON ANELVA CORPPriority: Mar 8, 2002Filed: Oct 21, 2009Published: Feb 18, 2010
Est. expiryMar 8, 2022(expired)· nominal 20-yr term from priority
H10P 14/43H10W 20/057C23C 16/448H01J 37/321H01J 2237/3326H01J 37/32357C23C 16/4488C23C 16/14C23C 16/08
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Claims

Abstract

In a metal film production apparatus, a copper plate member is etched with a Cl 2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl 2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl 2 gas, and the Cl* is supplied into the chamber to withdraw a Cl 2 gas from the precursor adsorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

Claims

exact text as granted — not AI-modified
1 . A production method for forming a metal film, comprising:
 accommodating a substrate having a depression and a metal member into a chamber which is provided with an inlet for feeding a raw material gas including halogen atoms and an outlet for exhausting an atmosphere of the chamber, wherein said inlet faces the surface of the metal member to direct a flow of the raw material gas to the surface of the metal member;   generating a plasma gas containing halogen radical derived from the raw material gas in a space between the metal member and the inlet, wherein the plasma gas etches the metal member so that a reaction product comprising the metal and the halogen atoms is produced and the halogen radical is applied to the surface of the substrate;   heating the substrate at a temperature so as to form a metal film comprising the metal which is deposited from the reaction product on the substrate; and   controlling a mass of the halogen radical by adjusting the raw material gas feeding from the inlet so that the metal film is selectively deposited in the depression prior to formation of a non-depression surface of the substrate.   
   
   
       2 . The production method according to  claim 1 , wherein said depression in a substrate is a trench or a hole. 
   
   
       3 . The production method according to  claim 1 , wherein the halogen radical is chlorine radical. 
   
   
       4 . The production method according to  claim 1 , wherein the metal is Cu, Ta, Ti or W. 
   
   
       5 . The production method according to  claim 1 , wherein the depression comprises a plurality of depressions of different diameters.

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