Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

Abstract

A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

What is claimed is:  
     
         1 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a nitrogen-containing gas in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate.    
     
     
         2 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a nitrogen-containing gas in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate, and after film formation of the metal nitride, stops supply of the nitrogen-containing gas, and makes the temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
     
     
         3 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    nitrogen-containing gas supply means for supplying a nitrogen-containing gas to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate.    
     
     
         4 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    nitrogen-containing gas supply means for supplying a nitrogen-containing gas to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate, and then stops supply of the nitrogen-containing gas, and makes the temperature of the substrate lower than the temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
     
     
         5 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the plasma generation means includes a coiled winding antenna disposed around the chamber.  
     
     
         6 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the source gas containing the halogen is the source gas containing chlorine.  
     
     
         7 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the nitrogen-containing gas is a gas containing ammonia.  
     
     
         8 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.  
     
     
         9 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    exciting a nitrogen-containing gas in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate.    
     
     
         10 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    exciting a nitrogen-containing gas in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate; and    after film formation of the metal nitride, stopping supply of the nitrogen-containing gas, and making the temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
     
     
         11 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate.    
     
     
         12 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate; and    after film formation of the metal nitride, stopping supply of the nitrogen-containing gas, and making the temperature of the substrate lower than the temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
     
     
         13 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    nitrogen-containing gas supply means for supplying a gas containing nitrogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and which converts the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;    diluent gas supply means for supplying a diluent gas to a site above the surface of the substrate; and    surface treatment plasma generation means for performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate a diluent gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         14 . The barrier metal film production apparatus of  claim 13 , further comprising: 
 oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         15 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    nitrogen-containing gas supply means for supplying a gas containing nitrogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and which converts the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;    oxygen gas supply means for supplying an oxygen gas to a site above the surface of the substrate; and    oxygen plasma generation means for performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the oxygen gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film, and at the same time, forming an oxide layer on the most superficial layer of the barrier metal film.    
     
     
         16 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    nitrogen-containing gas supply means for supplying a gas containing nitrogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and which converts the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the plasma generation means to form the metal nitride as a film, for use as a barrier metal film, on a surface of the substrate;    oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         17 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    nitrogen-containing gas supply means for supplying a gas containing nitrogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and which converts the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the plasma generation means to form the metal nitride as a film on a surface of the substrate, then makes the temperature of the substrate lower than the temperature of the plasma generation means and stops supply of the gas containing nitrogen from the nitrogen-containing gas supply means, thereby forming the metal component of the precursor as a film on the metal nitride for use as a barrier metal film;    oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         18 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film;    oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         19 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen into the chamber;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate, and after film formation of the metal nitride, stops supply of the nitrogen-containing gas and makes the temperature of the substrate lower than a temperature of the etched member, thereby forming the metal component of the precursor as a film on the metal nitride on the substrate for use as a barrier metal film;    oxygen gas supply means for supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    oxygen plasma generation means which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         20 . The barrier metal film production apparatus of any one of  claims 14  to  19 , further comprising: 
 hydrogen gas supply means for supplying a hydrogen gas into the chamber; and  
 hydroxyl group plasma generation means which converts the atmosphere within the chamber into a plasma to generate a hydrogen gas plasma so that hydroxyl groups are formed on the oxide layer.  
 
     
     
         21 . The barrier metal film production apparatus of any one of  claims 13  to  20 , wherein the source gas containing the halogen is the source gas containing chlorine.  
     
     
         22 . The barrier metal film production apparatus of any one of  claims 13  to  21 , wherein the gas containing nitrogen is a gas containing ammonia.  
     
     
         23 . The barrier metal film production apparatus of any one of  claims 13  to  22 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.  
     
     
         24 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also converting the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;    supplying a diluent gas to a site within the chamber above the surface of the substrate; and    performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate a diluent gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         25 . The barrier metal film production method of  claim 24 , further comprising: 
 supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         26 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also converting the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of plasma generation means to form the metal nitride as a barrier metal film on a surface of the substrate;    supplying an oxygen gas to a site above the surface of the substrate; and    performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that nitrogen atoms in a superficial layer of the barrier metal film are removed by the oxygen gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film, while forming an oxide layer on the most superficial layer of the barrier metal film.    
     
     
         27 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also converting the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of plasma generation means to form the metal nitride as a film on a surface of the substrate for use as a barrier metal film;    supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         28 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also converting the atmosphere within the chamber into a plasma to generate a nitrogen-containing gas plasma so that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of plasma generation means to form the metal nitride as a film on a surface of the substrate, then making the temperature of the substrate lower than the temperature of the plasma generation means and stopping supply of the gas containing nitrogen, thereby forming the metal component of the precursor as a film on the metal nitride for use as a barrier metal film;    supplying an oxygen gas into the chamber immediately before formation of the most superficial layer of the barrier metal film is completed; and    converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         29 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting the gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate for use as a barrier metal film;    supplying an oxygen gas at a site above a surface of the substrate immediately before formation of the most superficial layer of the barrier metal film is completed; and    converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         30 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting the gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate, and after film formation of the metal nitride, stopping supply of the nitrogen-containing gas and making the temperature of the substrate lower than a temperature of the etched member, thereby forming the metal component of the precursor as a film on the metal nitride on the substrate for use as a barrier metal film;    supplying an oxygen gas at a site above a surface of the substrate immediately before formation of the most superficial layer of the barrier metal film is completed; and    converting the atmosphere within the chamber into a plasma to generate an oxygen gas plasma so that an oxide layer is formed on the most superficial layer of the barrier metal film.    
     
     
         31 . The barrier metal film production method of any one of  claims 25  to  30 , further comprising: 
 supplying a hydrogen gas into the chamber; and  
 converting the atmosphere within the chamber into a plasma to generate a hydrogen gas plasma so that hydroxyl groups are formed on the oxide layer.  
 
     
     
         32 . The barrier metal film production method of any one of  claims 24  to  31 , wherein the source gas containing the halogen is the source gas containing chlorine.  
     
     
         33 . The barrier metal film production method of any one of  claims 24  to  32 , wherein the gas containing nitrogen is a gas containing ammonia.  
     
     
         34 . The barrier metal film production method of any one of  claims 24  to  33 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.  
     
     
         35 . A metal film production method involving treatment of a surface of a substrate having a barrier metal film of a metal nitride formed thereon, comprising: 
 performing a surface treatment which removes nitrogen atoms in a superficial layer of the barrier metal film to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film, thereby substantially forming a metal layer on the superficial layer.    
     
     
         36 . A metal film comprising a metal layer substantially formed on a superficial layer of a barrier metal film of a metal nitride formed on a surface of a substrate, said metal layer being formed by performing a surface treatment which removes nitrogen atoms in the superficial layer of the barrier metal film to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.  
     
     
         37 . A metal film production method involving treatment of a surface of a substrate having a barrier metal film of a metal nitride formed thereon, comprising: 
 performing a surface treatment which etches the barrier metal film on the surface of the substrate with a diluent gas plasma to flatten the barrier metal film.    
     
     
         38 . A metal film production method involving treatment of a surface of a substrate having a barrier metal film of a metal nitride formed thereon, comprising: 
 performing a surface treatment which etches the barrier metal film on the surface of the substrate with a diluent gas plasma to flatten the barrier metal film, and removes nitrogen atoms in a superficial layer of the barrier metal film by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         39 . A metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting a gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate for use as a barrier metal film; and    performing a surface treatment which etches the barrier metal film on a surface of the substrate with a diluent gas plasma to flatten the barrier metal film.    
     
     
         40 . A metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting a gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate for use as a barrier metal film; and    performing a surface treatment which etches the barrier metal film on a surface of the substrate with a diluent gas plasma to flatten the barrier metal film, and removes nitrogen atoms in a superficial layer of the barrier metal film by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         41 . A metal film production method comprising: 
 performing a surface treatment which generates a diluent gas plasma within a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon, to etch the barrier metal film on a surface of the substrate with the diluent gas plasma, thereby flattening the barrier metal film;    then supplying a source gas containing a halogen into the chamber;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that an etched member made of a metal is etched with the source gas plasma to form a precursor within the chamber from a metal component contained in the etched member and the source gas; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the substrate having the barrier metal film flattened.    
     
     
         42 . A metal film production method comprising: 
 performing a surface treatment which generates a diluent gas plasma within a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon, to etch the barrier metal film on a surface of the substrate with the diluent gas plasma, thereby flattening the barrier metal film, and removes nitrogen atoms in a superficial layer of the barrier metal film by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film;    then supplying a source gas containing a halogen into the chamber;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that an etched member made of a metal is etched with the source gas plasma to form a precursor within the chamber from a metal component contained in the etched member and the source gas; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the substrate having the barrier metal film flattened and having the nitrogen content of the superficial layer relatively decreased.    
     
     
         43 . The metal film production method of  claim 37 ,  39  or  41 , further comprising: 
 applying a densification treatment for densifying metal atoms in a superficial layer of the barrier metal film after flattening the barrier metal film and also relatively decreasing the nitrogen content of the superficial layer.  
 
     
     
         44 . The metal film production method of any one of  claims 37  to  43 , wherein the diluent gas plasma is an argon gas plasma.  
     
     
         45 . The metal film production method of any one of  claims 37  to  44 , wherein the metal nitride is tantalum nitride, tungsten nitride or titanium nitride.  
     
     
         46 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    halogen gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    barrier plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film;    diluent gas supply means for supplying a diluent gas to a site above a surface of the substrate; and    surface treatment plasma generation means which converts the atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film.    
     
     
         47 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    halogen gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    barrier plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film;    diluent gas supply means for supplying a diluent gas to a site above a surface of the substrate; and    surface treatment plasma generation means for performing a surface treatment which converts the atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film, and removes nitrogen atoms in a superficial layer of the barrier metal film to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         48 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon;    diluent gas supply means for supplying a diluent gas to an interior of the chamber above a surface of the substrate;    surface treatment plasma generation means which converts an atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film;    a metallic etched member provided in the chamber;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the flattened barrier metal film.    
     
     
         49 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon;    diluent gas supply means for supplying a diluent gas to an interior of the chamber above a surface of the substrate;    surface treatment plasma generation means which converts an atmosphere within the chamber into a plasma to generate a diluent gas plasma so that the barrier metal film on the surface of the substrate is etched with the diluent gas plasma to flatten the barrier metal film, and also removes nitrogen atoms in a superficial layer of the barrier metal film by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film;    a metallic etched member provided in the chamber;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the barrier metal film flattened and having the nitrogen content of the superficial layer relatively decreased.    
     
     
         50 . The metal film production apparatus of  claim 47  or  49 , further comprising: 
 densification treatment means for densifying metal atoms in the superficial layer after flattening the barrier metal film and also relatively decreasing the nitrogen content of the superficial layer.  
 
     
     
         51 . The metal film production apparatus of any one of  claims 46  to  50 , wherein the diluent gas plasma is an argon gas plasma.  
     
     
         52 . The metal film production apparatus of any one of  claims 46  to  51 , wherein the metal nitride is tantalum nitride, tungsten nitride or titanium nitride.  
     
     
         53 . A metal film formed by flattening a barrier metal film of a metal nitride on a surface of a substrate by etching with a diluent gas plasma.  
     
     
         54 . A metal film formed by a surface treatment which flattens a barrier metal film of a metal nitride on a surface of a substrate by etching with a diluent gas plasma, and removes nitrogen atoms in a superficial layer of the barrier metal film by the diluent gas plasma to decrease a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.  
     
     
         55 . A metal film production method involving treatment of a surface of a substrate having a barrier metal film of a metal nitride formed thereon, comprising: 
 performing a surface treatment which reacts the barrier metal film on the surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         56 . A metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting a gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate for use as a barrier metal film; and    performing a surface treatment which reacts the barrier metal film on a surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         57 . A metal film production method comprising: 
 performing a surface treatment in a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon, said surface treatment comprising reacting the barrier metal film on a surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film;    then supplying a source gas containing a halogen into the chamber;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that a metallic etched member is etched with the source gas plasma to form a precursor within the chamber from a metal component contained in the etched member and the source gas; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the substrate having the barrier metal film flattened thereon.    
     
     
         58 . The metal film production method of any one of  claims 55  to  57 , wherein the reducing gas atmosphere is a hydrogen gas plasma.  
     
     
         59 . The metal film production method of any one of  claims 55  to  58 , wherein the metal nitride is tantalum nitride, tungsten nitride, or titanium nitride.  
     
     
         60 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    halogen gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    barrier plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film;    reducing gas supply means for supplying a reducing gas to a site above a surface of the substrate; and    surface treatment means which reacts the barrier metal film on the surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.    
     
     
         61 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon;    reducing gas supply means for supplying a reducing gas to a site above a surface of the substrate;    surface treatment means which reacts the barrier metal film on the surface of the substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film;    a metallic etched member provided in the chamber;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the barrier metal film having the nitrogen content of the superficial layer relatively decreased.    
     
     
         62 . The metal film production apparatus of  claim 60  or  61 , wherein the reducing gas supply means is means for supplying a gas containing hydrogen, and the surface treatment means is hydrogen gas plasma generation means for generating a hydrogen gas plasma.  
     
     
         63 . The metal film production apparatus of any one of  claims 60  to  62 , wherein the metal nitride is tantalum nitride, tungsten nitride, or titanium nitride.  
     
     
         64 . A metal film formed by a surface treatment which reacts a barrier metal film of a metal nitride on a surface of a substrate in a reducing gas atmosphere to remove nitrogen atoms in a superficial layer of the barrier metal film, thereby decreasing a nitrogen content of the superficial layer relative to an interior of a matrix of the barrier metal film.  
     
     
         65 . A metal film production method involving treatment of a surface of a substrate having a barrier metal film of a metal nitride formed thereon, comprising: 
 performing a surface treatment which forms nuclei of silicon atoms on a surface of the barrier metal film on the surface of the substrate by a gas plasma containing silicon.    
     
     
         66 . A metal film production method comprising: 
 supplying a source gas containing a halogen to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and also exciting a gas containing nitrogen in a manner isolated from the chamber accommodating the substrate;    forming a metal nitride upon reaction between excited nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of means for formation of the metal nitride to form the metal nitride as a film on the substrate for use as a barrier metal film; and    performing a surface treatment which forms nuclei of silicon atoms on a surface of the barrier metal film on a surface of the substrate by a gas plasma containing silicon.    
     
     
         67 . A metal film production method comprising: 
 performing a surface treatment in a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon, said surface treatment comprising forming nuclei of silicon atoms on a surface of the barrier metal film on a surface of the substrate by a gas plasma containing silicon;    then supplying a source gas containing a halogen into the chamber;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma so that a metallic etched member is etched with the source gas plasma to form a precursor within the chamber from a metal component contained in the etched member and the source gas; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the substrate having the nuclei of silicon atoms formed on the surface of the barrier metal film.    
     
     
         68 . The metal film production method of any one of  claims 65  to  67 , wherein the gas containing silicon is a silane.  
     
     
         69 . The metal film production method of anyone of  claims 65  to  68 , wherein the metal nitride is tantalum nitride, tungsten nitride, or titanium nitride.  
     
     
         70 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    halogen gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    barrier plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a gas containing nitrogen in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor;    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate for use as a barrier metal film;    silicon-containing gas supply means for supplying a gas containing silicon to a site above a surface of the substrate; and    surface treatment plasma generation means which generates a gas plasma containing silicon to form nuclei of silicon atoms on a surface of the barrier metal film on the surface of the substrate.    
     
     
         71 . A metal film production apparatus, comprising: 
 a chamber accommodating a substrate having a barrier metal film of a metal nitride formed thereon;    silicon-containing gas supply means for supplying a gas containing silicon to a site above a surface of the substrate;    surface treatment plasma generation means which generates a gas plasma containing silicon to form nuclei of silicon atoms on a surface of the barrier metal film on the surface of the substrate;    a metallic etched member provided in the chamber;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts the source gas containing the halogen into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the barrier metal film having the nuclei of silicon atoms formed on the surface thereof.    
     
     
         72 . The metal film production apparatus of  claim 70  or  71 , wherein the gas containing silicon is a silane.  
     
     
         73 . The metal film production apparatus of any one of  claims 70  to  72 , wherein the metal nitride is tantalum nitride, tungsten nitride, or titanium nitride.  
     
     
         74 . A metal film formed by applying a surface treatment to a barrier metal film of a metal nitride on a surface of a substrate such that nuclei of silicon atoms are formed on a surface of the barrier metal film on the surface of the substrate by a gas plasma containing silicon.