Apparatus for the formation of a metal film

Abstract

An apparatus for forming a metal film, including a reaction vessel for housing a substrate, a precursor feeding device for bubbling a carrier gas through a liquid organometallic complex, vaporizing the organometallic complex, producing a precursor from the vaporized organometallic complex, and feeding the precursor into the reaction vessel, a rotating magnetic field generator for creating a rotating magnetic field in a space above the substrate, and a second plasma generator for generating a plasma from a reducing gas fed into the reaction vessel.

1 - 2 . (canceled) 
   
   
       3 . An apparatus for manufacturing a metal film, comprising:
 a reaction vessel configured and positioned to house a substrate and a plate made of metal;   a first inlet configured and positioned to feeding a first gas comprising a halogen atom in the reaction vessel;   an outlet configured and positioned to exhaust said reaction vessel;   a plasma generator configured and positioned to generate a plasma containing the halogen atom, to etch said plate by the generated plasma, thereby reacting the metal of said plate with the halogen atom, and forming the reaction product comprising the metal and the halogen atom;   a second inlet configured and positioned to feed a second gas for removing the halogen atom from the reaction product; and   a heater configured and positioned to heat said substrate at a temperature controlled such as depositing the metal on said substrate.   
   
   
       4 . An apparatus according to  claim 3 , wherein said second gas comprises a plasma gas containing the reducing material. 
   
   
       5 . An apparatus according to  claim 4 , wherein said reducing material comprises a halogen gas, a hydrogen halogenide gas or a hydrogen gas. 
   
   
       6 . An apparatus according to  claim 3 , wherein said first gas comprises a halogen gas or a hydrogen halogenide gas. 
   
   
       7 . An apparatus according to  claim 6 , wherein said halogen gas comprises a chlorine gas. 
   
   
       8 . An apparatus according to  claim 3 , wherein said metal comprises Cu or a noble metal. 
   
   
       9 . An apparatus for manufacturing a metal film, comprising:
 a reaction vessel configured and positioned to house a substrate and a plate made of metal;   a first inlet configured and positioned to feed a first gas comprising a halogen atom in the reaction vessel;   an outlet configured and positioned to exhaust said reaction vessel;   a first plasma generator configured and positioned to generate a plasma containing the halogen atom, to etch said plate by the generated plasma, thereby reacting the metal of said plate with the halogen atom, and forming the reaction product comprising the metal and the halogen atom;   a second inlet configured and positioned to feeding a second gas for removing the halogen atom from the reaction product;   a second plasma generator configured and positioned to generate a plasma derived from the second gas; and   a heater configured and positioned to heat said substrate at a temperature controlled such as depositing the metal on said substrate.   
   
   
       10 . An apparatus according to  claim 9 , wherein said reducing material comprises a halogen gas, a hydrogen halogenide gas or a hydrogen gas. 
   
   
       11 . An apparatus according to  claim 9 , wherein said first gas comprises a halogen gas or a hydrogen halogenide gas. 
   
   
       12 . An apparatus according to  claim 11 , wherein said halogen gas comprises a chlorine gas. 
   
   
       13 . An apparatus according to  claim 9 , wherein said metal comprises Cu or a noble metal.