Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

Abstract

A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

1 . A production method for a barrier film comprising:
 arranging a metallic etched member and a substrate within a chamber;   forming a plasma of a source gas in the chamber so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;   exciting a nitrogen-containing gas in an excitation chamber isolated from the chamber and supplying the excited nitrogen-containing gas into the chamber in which the source gas plasma is formed, through an opening in the chamber; and   terminating the supply of the excited nitrogen-containing gas to the chamber with retaining the source gas plasma in the chamber, thereby permitting a metal film to form on the metal nitride film.   
   
   
       2 . The production method of  claim 1 , wherein the temperature of the substrate is controlled to be lower than that of the source gas plasma during the formations of the metal nitride film and metal film. 
   
   
       3 . The production method of  claim 1 , wherein the source gas plasma is generated by an electromagnetic wave from a coiled winding antenna disposed around the chamber. 
   
   
       4 . The production method of  claim 1 , wherein the source gas is the source gas containing chlorine. 
   
   
       5 . The production method of  claim 1 , wherein the nitrogen-containing gas is a gas containing ammonia. 
   
   
       6 . The production method of  claim 1 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.