Barrier metal film production apparatus, barrier metal film production method, metal film production method, and metal film production apparatus

Abstract

A Cl 2 gas plasma is generated at a site within a chamber between a substrate and a metal member. The metal member is etched with the Cl 2 gas plasma to form a precursor. A nitrogen gas is excited in a manner isolated from the chamber accommodating the substrate. A metal nitride is formed upon reaction between excited nitrogen and the precursor, and formed as a film on the substrate. After film formation of the metal nitride, a metal component of the precursor is formed as a film on the metal nitride on the substrate. In this manner, a barrier metal film with excellent burial properties and a very small thickness is produced at a high speed, with diffusion of metal being suppressed and adhesion to the metal being improved.

1 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a nitrogen-containing gas in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate.    
   
   
       2 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas;    excitation means for exciting a nitrogen-containing gas in a manner isolated from the chamber;    formation means for forming a metal nitride upon reaction between nitrogen excited by the excitation means and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the formation means to form the metal nitride as a film on the substrate, and after film formation of the metal nitride, stops supply of the nitrogen-containing gas, and makes the temperature of the substrate lower than a temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
   
   
       3 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    nitrogen-containing gas supply means for supplying a nitrogen-containing gas to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate.    
   
   
       4 . A barrier metal film production apparatus, comprising: 
 a chamber accommodating a substrate;    a metallic etched member provided in the chamber at a position opposed to the substrate;    source gas supply means for supplying a source gas containing a halogen to an interior of the chamber between the substrate and the etched member;    nitrogen-containing gas supply means for supplying a nitrogen-containing gas to an interior of the chamber between the substrate and the etched member;    plasma generation means which converts an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    control means which makes a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate, and then stops supply of the nitrogen-containing gas, and makes the temperature of the substrate lower than the temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.    
   
   
       5 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the plasma generation means includes a coiled winding antenna disposed around the chamber.  
   
   
       6 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the source gas containing the halogen is the source gas containing chlorine.  
   
   
       7 . The barrier metal film production apparatus of anyone of  claims 1  to  4 , wherein the nitrogen-containing gas is a gas containing ammonia.  
   
   
       8 . The barrier metal film production apparatus of any one of  claims 1  to  4 , wherein the etched member is made of tantalum, tungsten, titanium or silicon which is a halide-forming metal.  
   
   
       9 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor; and    making a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate.    
   
   
       10 . A barrier metal film production method comprising: 
 supplying a source gas containing a halogen and a nitrogen-containing gas to an interior of a chamber between a substrate and a metallic etched member;    converting an atmosphere within the chamber into a plasma to generate a source gas plasma and a nitrogen-containing gas plasma so that the etched member is etched with the source gas plasma to form a precursor from a metal component contained in the etched member and the source gas, and that a metal nitride is formed upon reaction between nitrogen and the precursor;    making a temperature of the substrate lower than a temperature of the etched member to form the metal nitride as a film on the substrate; and    after film formation of the metal nitride, stopping supply of the nitrogen-containing gas, and making the temperature of the substrate lower than the temperature of the etched member to form the metal component of the precursor as a film on the metal nitride on the substrate.