Method and apparatus for production of metal film or the like

Abstract

In a metal film production apparatus, a copper plate member is etched with a Cl 2 gas plasma within a chamber to form a precursor comprising a Cu component and a Cl 2 gas; and the temperatures of the copper plate member and a substrate and a difference between their temperatures are controlled as predetermined, to deposit the Cu component of the precursor on the substrate, thereby forming a film of Cu. In this apparatus, Cl* is formed in an excitation chamber of a passage communicating with the interior of the chamber to flow a Cl 2 gas, and the Cl* is supplied into the chamber to withdraw a Cl 2 gas from the precursor absorbed onto the substrate, thereby promoting a Cu film formation reaction. The apparatus has a high film formation speed, can use an inexpensive starting material, and can minimize impurities remaining in the film.

1 . A method for producing a composite film containing a metal and a non-metal, comprising:
 housing a substrate and a composite member comprising a metal selected from the group consisting of Cu, Ta, W, Zn, In and Cd and a non-metal in a chamber;   feeding a source gas comprising a halogen into the chamber;   generating a source gas plasma containing the halogen atom within the chamber;   etching said composite member by the generated plasma, so that said metal and said non-metal are reacted with the halogen to form a precursor comprising said metal and said halogen and also a precursor comprising said non-metal and said halogen; and   controlling temperatures of said composite member and said substrate so as to provide a predetermined temperature difference between the temperatures, thereby depositing a film comprising said metal and said non-metal on said substrate.   
   
   
       2 . A method according to  claim 1 , wherein said non-metal is S or Se. 
   
   
       3 . A method for producing a metal film, comprising:
 housing a substrate and a composite metal member comprising at least two metals selected from the group consisting of Cu, Ta, W, Zn, In and Cd in a chamber;   feeding a source gas comprising a halogen into the chamber;   generating a source gas plasma containing the halogen within the chamber;   etching said composite metal member by the generated plasma so that the composite metal member is reacted with the halogen to form a plurality of kinds of precursor comprising the plurality of metals and the halogen; and   controlling temperatures of said composite metal member and said substrate so as to provide a predetermined temperature difference between the temperatures, thereby depositing a film comprising said plurality of the metals on said substrate.   
   
   
       4 . Apparatus for producing a composite film containing a metal and a non-metal, comprising:
 a chamber for housing substrate and a composite member comprising a metal selected from the group consisting of Cu, Ta, W, Zn, In and Cd and non-metal;   an inlet for connection to a supply of source gas comprising a halogen for feeding said source gas into the chamber;   an outlet arranged to exhaust an atmosphere of said chamber;   a plasma generator arranged to generate a source gas plasma containing the halogen atom, to etch said composite member by the generated plasma, so that composite member is reacted with the halogen to form a precursor comprising said metal and said halogen and also a precursor comprising said non-metal and said halogen; and   a temperature control means comprising a heater arranged to control temperatures of said composite metal member and said substrate so as to provide a predetermined temperature difference between the temperatures, so as to deposit a film comprising said metal and said non-metal on said substrate.   
   
   
       5 . Apparatus according to  claim 4 , wherein said composite member comprises Cu or In and Se. 
   
   
       6 . Apparatus according to  claim 4 , wherein said non-metal is S or Se. 
   
   
       7 . Apparatus according to  claim 4 , wherein said composite member comprises Cd and S. 
   
   
       8 . Apparatus according to  claim 4 , wherein said composite member comprises Zn and Se. 
   
   
       9 . Apparatus for producing a metal film, comprising:
 a chamber for housing a substrate and a composite metal member comprising at least two metals selected from the group consisting of Cu, Ta, W, Zn, In and Cd;   an inlet for connection to a supply of source gas comprising a halogen for feeding said source gas into the chamber;   an outlet arranged to exhaust an atmosphere of said chamber;   a plasma generator arranged to generate a source gas plasma containing the halogen to etch said composite metal member by the generated plasma, so that the composite metal member is reacted with the halogen to form a plurality of kinds of precursor consisting the plurality of metals and the halogen; and   a temperature control means comprising a heater arranged to control temperatures of said composite metal member and said substrate so as to provide a predetermined temperature difference between the temperatures, so as to deposit a film comprising said plurality of metals on said substrate.   
   
   
       10 . An apparatus according to  claim 9 , wherein said composite metal comprises Cu and In.