Methods for sealing chambers of microelectronic packages

Abstract

Microelectronic packages having chambers and sealing materials, and methods of making the packages, and sealing the chambers, are disclosed. An exemplary package may include a first surface, a second surface, a solid sealing material including an intermetallic compound, such as, for example, of gallium or another relatively low melting material, between the first surface and the second surface, and a chamber defined by the first surface, the second surface, and the sealing material. An exemplary method may include disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material, and sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming an intermetallic compound with the liquid metal.

1 - 23 . (canceled)  
   
   
       24 . A method comprising: 
 disposing a ring of a sealing material including a liquid metal between a first surface and a second surface to define a chamber between the first surface, the second surface, and the ring of the sealing material;    sealing the chamber by heating the sealing material to react the liquid metal with a metal that is capable of forming one or more intermetallic compounds with the liquid metal.    
   
   
       25 . The method of  claim 24 , wherein said disposing comprises disposing a liquid metal having a melting point temperature that is less than 250° C.  
   
   
       26 . The method of  claim 25 , wherein said disposing comprises disposing a liquid metal having a melting point temperature that is less than 100° C.  
   
   
       27 . The method of  claim 26 , wherein said disposing comprises disposing a liquid metal including gallium.  
   
   
       28 . The method of  claim 27 , wherein said disposing the liquid metal including the gallium includes disposing a liquid metal lacking a solid metal.  
   
   
       29 . The method of  claim 24 , wherein said sealing comprises sealing one or more microelectromechanical systems in the chamber.  
   
   
       30 . The method of  claim 24 , wherein said disposing comprises printing or dispensing the sealing material.  
   
   
       31 . A method comprising: 
 applying a sealing material including a liquid metal having a melting point that is less than 250° C. over a first surface; placing a second surface relative to the first surface to define a chamber between the first surface, the second surface, and the sealing material;    reacting the liquid metal with one or more metals to form a compound having a substantially fixed stoichiometric ratio and a melting point that is greater than 250° C.    
   
   
       32 . The method of  claim 31 , wherein said applying the sealing material comprises dispensing or printing the liquid metal, and wherein the melting point is less than 100° C.  
   
   
       33 . The method of  claim 31 , wherein said applying the sealing material comprises introducing one or more of gallium, cesium, and indium over the first surface.  
   
   
       34 . The method of  claim 31 , wherein one or more of the first surface and the second surface include the one or more metals.  
   
   
       35 . The method of  claim 31 , further comprising sealing one or more microelectromechanical systems in the chamber.  
   
   
       36 . The method of  claim 31 , wherein said applying the sealing material comprises applying a paste including particles of the one or more metals.  
   
   
       37 . A method comprising: 
 dispensing or printing a ring of material including a liquid metal having a melting point that is less than 250° C. over one or more of a surface of a die having one or more microelectromechanical systems and a surface of a cap;    placing the cap over the die to define a chamber between the cap, the die, and the sealing material;    sealing the chamber by reacting the liquid metal with one or more other metals to form a compound having a melting point temperature that is greater than 250° C.    
   
   
       38 . The method of  claim 37 , wherein said dispensing or printing comprises dispensing or printing a paste having particles of the one or more other metals therein.  
   
   
       39 . The method of  claim 37 , wherein said sealing the chamber comprises forming one or more intermetallic compounds.  
   
   
       40 . The method of  claim 37 , wherein the melting point of the liquid metal is less than 100° C.  
   
   
       41 . The method of  claim 37 , wherein the liquid metal comprises one or more metals selected from gallium, cesium, and indium.  
   
   
       42 . The method of  claim 41 , wherein the liquid metal comprises gallium.