Method of eliminating photoresist poisoning in damascene applications

Abstract

A method is provided for processing a substrate including treating a surface of a dielectric layer comprising silicon and carbon by exposing the dielectric layer comprising silicon and carbon to a plasma of an inert gas, and depositing a photoresist on the dielectric layer comprising silicon and carbon. The dielectric layer may comprise a first dielectric layer comprising silicon, carbon, and nitrogen, and a second layer of nitrogen-free silicon and carbon containing material in situ on the first dielectric layer, and a third dielectric layer comprising silicon, oxygen, and carbon on the second dielectric layer.

1 . A method for processing a substrate, comprising: 
 depositing a first dielectric layer comprising silicon, carbon, and nitrogen on the substrate in a processing chamber;    depositing a nitrogen-free silicon and carbon containing material on the first dielectric layer in the processing chamber;    depositing a second dielectric layer comprising silicon, oxygen, and carbon on the nitrogen-free silicon and carbon containing material by chemical vapor deposition; and    depositing a photoresist on the second dielectric layer.    
   
   
       2 . The method of  claim 1 , further comprising: 
 treating a surface of the second dielectric layer by exposing the second dielectric layer to a plasma of a processing gas prior to depositing a photoresist on the second dielectric layer comprising silicon and carbon.    
   
   
       3 . The method of  claim 1 , further comprising: 
 patterning and etching the photoresist layer to expose the second dielectric layer; and etching the second dielectric layer to form at least a portion of a damascene definition.    
   
   
       4 . The method of  claim 2 , wherein exposing the second dielectric layer to a plasma of a processing gas comprises introducing an inert gas of helium, argon, neon, xenon, krypton, or combinations thereof, into a processing chamber at a flow rate of about 3000 sccm or less, maintaining the processing chamber at a pressure of between about 7 Torr and about 10 Torr, maintaining the substrate temperature between about 300° C. and about 450° C., generating the plasma by supplying a power level for a 200 mm substrate between about 200 watts and about 800 watts to the processing chamber, and maintaining the plasma between about 40 and about 60 seconds.  
   
   
       5 . The method of  claim 3 , further comprising depositing one or more conductive materials in a portion of the damascene definition to form a damascene structure.  
   
   
       6 . A substrate, comprising: 
 a first dielectric layer comprising silicon, carbon, and nitrogen; and    a second dielectric layer comprising silicon, oxygen, and carbon adjacent the first dielectric layer.    
   
   
       7 . The substrate of  claim 6 , further comprising: 
 a photoresist adjacent the second dielectric layer.    
   
   
       8 . The substrate of  claim 6 , further comprising: 
 a silicon oxide cap or nitrogen-free silicon carbide cap adjacent the second dielectric layer; and    a photoresist adjacent the silicon oxide cap or nitrogen-free silicon carbide cap.    
   
   
       9 . The substrate of  claim 6 , further comprising: 
 an etch stop adjacent the second dielectric layer; and    a third dielectric layer comprising silicon, oxygen, and carbon, adjacent the etch stop.    
   
   
       10 . The substrate of  claim 9 , wherein the etch stop is silicon carbide or comprises silicon, carbon, and nitrogen.  
   
   
       11 . The substrate of  claim 9 , further comprising: 
 a photoresist adjacent the third dielectric layer.    
   
   
       12 . The substrate of  claim 6 , wherein the first dielectric layer is adjacent a conductive material.  
   
   
       13 . A substrate, comprising: 
 a first dielectric layer comprising silicon, carbon, and nitrogen, wherein the first dielectric layer is a diffusion barrier and is adjacent a conductive material;    a nitrogen free silicon carbide cap adjacent the first dielectric layer; and    a second dielectric layer comprising silicon, oxygen, and carbon adjacent the nitrogen free silicon carbide cap.    
   
   
       14 . The substrate of  claim 13 , further comprising: 
 a photoresist adjacent the second dielectric layer.    
   
   
       15 . The substrate of  claim 13 , further comprising: 
 one or more etch dielectric layers adjacent the second dielectric layer; and    a photoresist adjacent the one or more etch dielectric layers.    
   
   
       16 . The substrate of  claim 15 , wherein the one or more etch dielectric layers comprise a nitrogen doped silicon carbide layer adjacent the second dielectric layer.  
   
   
       17 . The substrate of  claim 13 , further comprising: 
 a silicon oxide cap or nitrogen-free silicon carbide cap adjacent the second dielectric layer; and    a photoresist adjacent the silicon oxide cap or nitrogen-free silicon carbide cap.    
   
   
       18 . A substrate, comprising: 
 a first dielectric layer comprising silicon, carbon, and nitrogen;    a nitrogen-free silicon and carbon containing material adjacent the first dielectric layer;    a second dielectric layer comprising silicon, oxygen, and carbon on the nitrogen-free silicon and carbon containing material;    an etch stop layer adjacent the second dielectric layer; and    a photoresist adjacent the etch stop layer.    
   
   
       19 . The substrate of  claim 18 , further comprising: 
 a silicon oxide cap or nitrogen-free silicon carbide cap formed adjacent the second dielectric layer.    
   
   
       20 . The substrate of  claim 19 , further comprising: 
 a photoresist adjacent the silicon oxide cap or nitrogen-free silicon carbide cap.