Methods of depositing materials over semiconductor substrates

Abstract

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

1 - 10 . (canceled)  
   
   
       11 . A method of depositing a material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate on a susceptor, the susceptor having at least one solid portion therethrough that is transparent to infrared radiation and over which the semiconductor substrate is received;    depositing a material over the semiconductor substrate; and    during the depositing, detecting substrate temperature by measuring substrate emissivity from a back side of the semiconductor substrate through the at least one infrared radiation transparent portion of the susceptor from a back side of the susceptor using a non-contacting emissivity sensor.    
   
   
       12 . A method of depositing a material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate on a susceptor, the susceptor having a front substrate receiving side and a back side, the susceptor having at least one solid portion therethrough that is transparent to infrared radiation and over which the semiconductor substrate is received;    depositing a material over the semiconductor substrate; and    during the depositing, impinging radiant energy onto the susceptor back side through the transparent solid portion effective to heat the semiconductor substrate being deposited upon.    
   
   
       13 . (canceled)  
   
   
       14 . A method of depositing an elemental silicon-comprising material over a semiconductor substrate, comprising: 
 positioning a semiconductor substrate on a susceptor, the susceptor having a front substrate receiving side face and a back side face, the susceptor comprising a ring having a radial inner portion at least a radial majority of which is non-solid space extending from the front side face to the back side face, the semiconductor substrate comprising a front side and a back side;    depositing an elemental silicon-comprising material at least on the substrate front side; and    during the depositing, impinging radiant energy onto the substrate back side through the radial central non-solid portion of the susceptor.    
   
   
       15 . A method of selectively depositing an epitaxial silicon-comprising material over a semiconductor substrate, comprising: 
 positioning a semiconductor substrate on a susceptor, the susceptor having a front substrate receiving side face and a back side face, the susceptor comprising a ring having a radial inner portion at least a radial majority of which is non-solid space extending from the front side face to the back side face, the semiconductor substrate comprising a front side and a back side, the substrate back side comprising an exposed material other than monocrystalline silicon; and    selectively depositing an epitaxial silicon-comprising material on at least a portion of the front side of the semiconductor substrate as compared to the back side of the semiconductor substrate which is exposed through the radial central non-solid portion of the susceptor during the depositing.    
   
   
       16 . (canceled)  
   
   
       17 . A method of depositing material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate on a susceptor;    engaging a peripheral edge of the semiconductor substrate with at least three radially movable substrate edge clamps on the susceptor;    causing the susceptor with semiconductor substrate to rotate; and    depositing a material over the semiconductor substrate while the semiconductor substrate is engaged with the substrate edge clamps.    
   
   
       18 . A method of depositing material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate on a susceptor;    rotating the susceptor with semiconductor substrate at a rotational speed effective to cause at least three radially movable substrate edge clamps on the susceptor to engage a peripheral edge of the semiconductor substrate; and    after and while engaging the peripheral edge of the semiconductor substrate with the at least three radially movable substrate edge clamps, continuing rotation of the susceptor while depositing a material over the semiconductor substrate.    
   
   
       19 . (canceled)  
   
   
       20 . A method of depositing material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate on a substrate bearing surface of a susceptor, the bearing surface comprising at least one vacuum opening therein;    applying a vacuum force to the at least one opening effective to apply a pulling force on the semiconductor substrate against the bearing surface; and    while the vacuum force is applied, rotating the susceptor while depositing a material over the semiconductor substrate.    
   
   
       21 . (canceled)  
   
   
       22 . A method of depositing material over a semiconductor substrate comprising: 
 positioning a semiconductor substrate over a surface of a susceptor, the surface comprising at least three gas emitting openings therein;    emitting gas from the at least three openings effective to levitate and rotate the semiconductor substrate relative to the susceptor; and    while levitating and rotating the semiconductor substrate relative to the susceptor, depositing a material over the semiconductor substrate.