Inventor · disambiguated record
Nirmal Ramaswamy
Also filed as: RAMASWAMY NIRMAL
47 granted patents·22 pending applications·300 citations·filing 2004–2020
98Inventor score
Top patents by PatentIndex Score
69 records- 0196US7390710B2Protection of tunnel dielectric using epitaxial siliconMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 24, 2008·85 cites·19 claims
- 0293US8258034B2Charge-trap based memoryRAMASWAMY NIRMAL·Filed 2009·Granted Sep 4, 2012·22 cites·18 claims
- 0393US7851307B2Method of forming complex oxide nanodots for a charge trapMICRON TECHNOLOGY INC·Filed 2007·Granted Dec 14, 2010·19 cites·26 claims
- 0493US7531395B2Methods of forming a layer comprising epitaxial silicon, and methods of forming field effect transistorsMICRON TECHNOLOGY INC·Filed 2005·Granted May 12, 2009·22 cites·53 claims
- 0593US7528424B2Integrated circuitryMICRON TECHNOLOGY INC·Filed 2006·Granted May 5, 2009·15 cites·32 claims
- 0690US10141322B2Metal floating gate composite 3D NAND memory devices and associated methodsINTEL CORP·Filed 2013·Granted Nov 27, 2018·7 cites·24 claims
- 0789US9306162B2Interfacial cap for electrode contacts in memory cell arraysSONY CORP·Filed 2014·Granted Apr 5, 2016·5 cites·31 claims
- 0889US8796751B2Transistors, memory cells and semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2012·Granted Aug 5, 2014·8 cites·22 claims
- 0989US7521356B2Atomic layer deposition systems and methods including silicon-containing tantalum precursor compoundsMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 21, 2009·13 cites·28 claims
- 1087US8772856B2Charge storage nodes with conductive nanodotsRAMASWAMY NIRMAL·Filed 2010·Granted Jul 8, 2014·6 cites·20 claims
- 1186US10256309B2Memory cells having electrically conductive nanodotsMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 9, 2019·3 cites·20 claims
- 1286US8035129B2Integrated circuitryMICRON TECHNOLOGY INC·Filed 2010·Granted Oct 11, 2011·5 cites·21 claims
- 1383US7276416B2Method of forming a vertical transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 2, 2007·6 cites·27 claims
- 1479US10818760B2Memory cells having electrically conductive nanodots and apparatus having such memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Oct 27, 2020·1 cites·20 claims
- 1579US7705389B2Thickened sidewall dielectric for memory cellMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 27, 2010·4 cites·13 claims
- 1679US7662649B2Methods for assessing alignments of substrates within deposition apparatuses; and methods for assessing thicknesses of deposited layers within deposition apparatusesMICRON TECHNOLOGY INC·Filed 2006·Granted Feb 16, 2010·5 cites·40 claims
- 1778US8796661B2Nonvolatile memory cells and methods of forming nonvolatile memory cellRAMASWAMY NIRMAL·Filed 2010·Granted Aug 5, 2014·3 cites·6 claims
- 1878US7807535B2Methods of forming layers comprising epitaxial siliconMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 5, 2010·4 cites·32 claims
- 1978US7547617B2Semiconductor device including container having epitaxial silicon thereinMICRON TECHNOLOGY INC·Filed 2006·Granted Jun 16, 2009·2 cites·36 claims
- 2077US8058140B2Thickened sidewall dielectric for memory cellWEIMER RON·Filed 2010·Granted Nov 15, 2011·4 cites·10 claims
- 2175US7517758B2Method of forming a vertical transistorMICRON TECHNOLOGY INC·Filed 2005·Granted Apr 14, 2009·3 cites·33 claims
- 2274US7709326B2Methods of forming layers comprising epitaxial siliconMICRON TECHNOLOGY INC·Filed 2006·Granted May 4, 2010·3 cites·31 claims
- 2374US7268023B2Method of forming a pseudo SOI substrate and semiconductor devicesMICRON TECHNOLOGY INC·Filed 2005·Granted Sep 11, 2007·5 cites·34 claims
- 2473US8846516B2Dielectric charge-trapping materials having doped metal sitesRAMASWAMY NIRMAL·Filed 2007·Granted Sep 30, 2014·5 cites·21 claims
- 2573US7132355B2Method of forming a layer comprising epitaxial silicon and a field effect transistorMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 7, 2006·10 cites·91 claims
- 2671US7989289B2Floating gate structuresINTEL CORP·Filed 2008·Granted Aug 2, 2011·5 cites·18 claims
- 2770US9691976B2Interfacial cap for electrode contacts in memory cell arraysSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Jun 27, 2017·1 cites·32 claims
- 2870US8643082B2Thickened sidewall dielectric for memory cellWEIMER RON·Filed 2011·Granted Feb 4, 2014·2 cites·25 claims
- 2970US8395140B2Cross-point memory utilizing Ru/Si diodeRAMASWAMY NIRMAL·Filed 2010·Granted Mar 12, 2013·3 cites·20 claims
- 3070US7144779B2Method of forming epitaxial silicon-comprising materialMICRON TECHNOLOGY INC·Filed 2004·Granted Dec 5, 2006·9 cites·43 claims
- 3169US11527631B2Memory cells having electrically conductive nanodots and apparatus having such memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 13, 2022·0 cites·21 claims
- 3269US7943507B2Atomic layer deposition systems and methods including silicon-containing tantalum precursor compoundsROUND ROCK RES LLC·Filed 2009·Granted May 17, 2011·2 cites·25 claims
- 3367US7768036B2Integrated circuitryMICRON TECHNOLOGY INC·Filed 2009·Granted Aug 3, 2010·1 cites·29 claims
- 3463US9029256B2Charge-trap based memoryRAMASWAMY NIRMAL·Filed 2012·Granted May 12, 2015·1 cites·19 claims
- 3560US7585371B2Substrate susceptors for receiving semiconductor substrates to be deposited uponMICRON TECHNOLOGY INC·Filed 2004·Granted Sep 8, 2009·2 cites·6 claims
- 3658US7115489B2Methods of growing epitaxial siliconMICRON TECHNOLOGY INC·Filed 2004·Granted Oct 3, 2006·2 cites·60 claims
- 3757US9202700B2Charge storage nodes with conductive nanodotsMICRON TECHNOLOGY INC·Filed 2014·Granted Dec 1, 2015·0 cites·20 claims
- 3857US8673706B2Methods of forming layers comprising epitaxial siliconRAMASWAMY NIRMAL·Filed 2004·Granted Mar 18, 2014·4 cites·45 claims
- 3957US2006216945A1Methods of depositing materials over semiconductor substratesBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4057US2006243208A1Substrate susceptors for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4157US2006180084A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4257US2006180087A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4357US2006191483A1Substrate susceptor for receiving a substrate to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4457US2006243209A1Substrate susceptors for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4556US7439136B2Method of forming a layer comprising epitaxial siliconMICRON TECHNOLOGY INC·Filed 2007·Granted Oct 21, 2008·0 cites·25 claims
- 4655US2007087576A1Substrate susceptor for receiving semiconductor substrates to be deposited uponBLOMILEY ERIC R·Filed 2006·Application pending·0 cites
- 4754US2017271587A1Capped electrode contact for rram cells and memory cell arraysSONY CORP·Filed 2017·Application pending·0 cites
- 4853US6987055B2Methods for deposition of semiconductor materialMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 17, 2006·3 cites·53 claims
- 4951US8203179B2Device having complex oxide nanodotsRAMASWAMY NIRMAL·Filed 2010·Granted Jun 19, 2012·0 cites·19 claims
- 5051US7898017B2Floating-gate memory cell and memory device and electronic system therewithMICRON TECHNOLOGY INC·Filed 2006·Granted Mar 1, 2011·0 cites·19 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Nirmal Ramaswamy files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →