Substrate susceptor for receiving semiconductor substrates to be deposited upon

Abstract

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

1 - 9 . (canceled)  
   
   
       10 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon, the susceptor comprising a body having a front substrate receiving side, a back side, and a peripheral edge; the body comprising at least one solid portion therethrough that is transparent to infrared radiation.  
   
   
       11 - 22 . (canceled)  
   
   
       23 . The substrate susceptor of  claim 10  wherein the solid portion comprises silicon dioxide.  
   
   
       24 . The substrate susceptor of  claim 10  wherein the solid portion comprises sapphire.  
   
   
       25 . The substrate susceptor of  claim 10  wherein the body comprises a substantially infrared opaque portion.  
   
   
       26 . The substrate susceptor of  claim 25  wherein the substantially infrared opaque portion comprises SiC-coated graphite.  
   
   
       27 . The substrate susceptor of  claim 25  wherein the substantially infrared opaque portion is thicker than said solid portion.  
   
   
       28 . The substrate susceptor of  claim 25  wherein said substantially infrared opaque portion comprises a ring which surrounds said solid portion.  
   
   
       29 . The substrate susceptor of  claim 29  wherein the substantially infrared opaque portion is thicker than said ring.  
   
   
       30 . The substrate susceptor of  claim 10  comprising no more than one solid portion that is transparent to infrared radiation.  
   
   
       31 . The substrate susceptor of  claim 10  wherein the substrate to be deposited upon will occupy an area over which said substrate will be received by the susceptor, said solid portion expanding across all of said area.  
   
   
       32 . The substrate susceptor of  claim 10  wherein an entirety of the body is encompassed by material that is transparent to infrared radiation.  
   
   
       33 . The substrate susceptor of  claim 10  wherein said solid portion is of variable thickness.