Substrate susceptors for receiving semiconductor substrates to be deposited upon

Abstract

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated. In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

1 - 15 . (canceled)  
   
   
       16 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon, comprising: 
 a body having a front substrate receiving side, a back side, and a peripheral edge; and    at least three movable substrate edge clamps associated with the body, the movable substrate edge clamps being positioned to engage a peripheral edge of a semiconductor substrate received by the body for deposition thereupon.    
   
   
       17 - 18 . (canceled)  
   
   
       19 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon, comprising: 
 a body having a front substrate receiving side, a back side, and a peripheral edge; and    a substrate bearing surface on the front substrate receiving side, the bearing surface comprising at least one vacuum opening configured to apply a pulling force on a semiconductor substrate received by the body against the bearing surface.    
   
   
       20 . (canceled)  
   
   
       21 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon, comprising: 
 a body having a front substrate receiving side, a back side, and a peripheral edge; and    a surface on the front substrate receiving side over which at least a portion of a semiconductor substrate to be deposited upon is to be received, the surface comprising at least three gas emitting openings configured to apply a substrate levitating and rotating force from gas emitted from the openings effective to levitate and rotate said semiconductor substrate relative to the susceptor body.    
   
   
       22 . (canceled)