Substrate susceptors for receiving semiconductor substrates to be deposited upon

Abstract

In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

1 - 7 . (canceled)  
   
   
       8 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon by thermal deposition comprising heating of the susceptor, the susceptor comprising a body having a front substrate receiving side, a back side, and a peripheral edge; the body comprising a peripheral-most region comprising at least 10% of radius of the body and an inner region received radially inward of the peripheral-most region, the body comprising multiple materials having at least two different thermal conductivities; the peripheral-most region and the inner region having different average thermal conductivities.  
   
   
       9 . A substrate susceptor for receiving a semiconductor substrate to be deposited upon by thermal deposition comprising heating of the susceptor, the susceptor comprising a body having a front substrate receiving side, a back side, and a peripheral edge; the body comprising a peripheral-most region, a first region received radially inward of the peripheral-most region, and a second region received radially inward of the first region; the body comprising multiple materials having at least two different thermal conductivities; the first region having an average thermal conductivity which is different from average thermal conductivity of the second region.  
   
   
       10 - 22 . (canceled)