Oxide films containing titanium

Abstract

Atomic layer deposition (ALD) type processes for producing titanium containing oxide thin films comprise feeding into a reaction space vapour phase pulses of titanium alkoxide as a titanium source material and at least one oxygen source material, such as ozone, capable of forming an oxide with the titanium source material. In preferred embodiments the titanium alkoxide is titanium methoxide.

1 . An atomic layer deposition process for producing titanium containing oxide thin films comprising alternately contacting a substrate in a reaction space with vapor phase pulses of a titanium alkoxide and at least one oxygen source material.  
   
   
       2 . The process according to  claim 1 , wherein the oxygen source material is selected from the group of water, oxygen, hydrogen peroxide, aqueous solution of hydrogen peroxide, ozone, oxides of nitrogen, halide-oxygen compounds, peracids (—O—O—H), alcohols, alkoxides, oxygen-containing radicals and mixtures thereof.  
   
   
       3 . The process according to  claim 2 , wherein the oxygen source material is ozone.  
   
   
       4 . The process according to  claim 1 , wherein the titanium alkoxide source temperature is about 140° C.  
   
   
       5 . The process according to  claim 1 , wherein the deposition temperature is in from about 100° C. to about 300° C.  
   
   
       6 . The process according to  claim 5 , wherein the deposition temperature is about 250° C.  
   
   
       7 . The process according to  claim 1 , additionally comprising contacting the substrate with alternating pulses of a second metal precursor.  
   
   
       8 . The process according to  claim 7 , wherein the titanium containing oxide thin film is a multicomponent film.  
   
   
       9 . The process according to  claim 7 , wherein the second metal precursor is a metal compound comprising a single metal or a complex metal compound comprising two or more metals.  
   
   
       10 . The process according to  claim 9 , wherein the metal compound or the complex metal compound comprises titanium, lanthanum or zirconium.  
   
   
       11 . A atomic layer deposition type process for depositing a multicomponent oxide thin film comprising titanium, the process comprising contacting a substrate with alternate and sequential vapor phase pulses of a metal precursor and an oxygen source material, wherein the metal precursor is a titanium alkoxide compound and the oxygen source material is ozone.  
   
   
       12 . The process of  claim 11 , additionally comprising contacting the substrate with a vapor phase pulse of a second metal precursor.  
   
   
       13 . The process of  claim 11 , wherein the titanium alkoxide compound is a titanium methoxide compound.  
   
   
       14 . The process of  claim 11 , wherein the multicomponent oxide comprises barium and strontium.  
   
   
       15 . A method for growing a thin film comprising barium, strontium and titanium on a substrate in a reaction chamber by atomic layer deposition, wherein a first growth cycle comprises: 
 feeding a first reactant pulse into the reaction chamber, wherein the first reactant is a titanium methoxide compound;    removing the first reactant from the reaction chamber with the aid of an inert gas;    feeding an oxygen source material into the reaction space, wherein the second reactant is ozone; and    removing excess second reactant from the reaction chamber with the aid of an inert gas.    
   
   
       16 . The method of  claim 15 , additionally comprising a second growth cycle, the second growth cycle comprising: 
 feeding a second reactant pulse into the reaction chamber, wherein the third reactant pulse is a barium compound; and    removing excess second reactant from the reaction chamber with the aid of an inert gas;    feeding an oxygen source material into the reaction chamber; and    removing excess oxygen source material from the reaction chamber with the aid of an inert gas.    
   
   
       17 . The method of  claim 16 , wherein the oxygen source material is ozone.  
   
   
       18 . The method of  claim 16 , wherein the barium compound is a cyclopentadienyl compound.  
   
   
       19 . The method of  claim 16 , additionally comprising a third growth cycle, the third growth cycle comprising: 
 feeding a third reactant pulse into the reaction chamber, wherein the third reactant pulse is a strontium compound; and    removing excess third reactant from the reaction chamber with the aid of an inert gas;    feeding an oxygen source material into the reaction chamber; and    removing excess oxygen source material from the reaction chamber with the aid of an inert gas.    
   
   
       20 . The method of  claim 18 , wherein the oxygen source material is ozone.  
   
   
       21 . The method of  claim 18 , wherein the strontium compound is a cyclopentadienyl compound.