Antireflective coating for use during the manufacture of a semiconductor device

Abstract

An antireflective layer formed from boron-doped amorphous carbon may be removed using a process which is less likely to over etch a dielectric layer than conventional technology. This layer may be removed by exposing the layer to an oxygen plasma (i.e. an “ashing” process), preferably concurrently with the ashing and removal of an overlying photoresist layer. An inventive process which uses the inventive antireflective layer is also described.

1 . An in-process semiconductor device, comprising: 
 an antireflective layer comprising amorphous carbon having a boron concentration of between about 0.1 atom % and about 20 atom %.    
   
   
       2 . The in-process semiconductor device of  claim 1  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 0.1 atom % and about 10 atom %.  
   
   
       3 . The in-process semiconductor device of  claim 1  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 1 atom % and about 15 atom %.  
   
   
       4 . The in-process semiconductor device of  claim 1  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 5 atom % and about 10 atom %.  
   
   
       5 . The in-process semiconductor device of  claim 1  further comprising a photoresist layer on the antireflective layer.  
   
   
       6 . The in-process semiconductor device of  claim 5  further comprising: 
 a conductive contact location; and    a dielectric layer having an opening therein,    wherein the antireflective layer and the photoresist layer each have openings therein, wherein the openings in the dielectric layer, the antireflective layer, and the photoresist layer are aligned and expose the conductive contact location.    
   
   
       7 . The in-process semiconductor device of  claim 6  wherein the conductive contact location is a conductive contact pad electrically coupled with a doped region within a semiconductor wafer.  
   
   
       8 . An antireflective layer used during the fabrication of an electronic device, comprising: 
 an antireflective layer comprising amorphous carbon having a boron concentration of between about 0.1 atom % and about 20 atom %.    
   
   
       9 . The antireflective layer of  claim 8  wherein the antireflective layer is an etch mask.  
   
   
       10 . The antireflective layer of  claim 9  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 0.1 atom % and about 10 atom %.  
   
   
       11 . The antireflective layer of  claim 9  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 1 atom % and about 15 atom %.  
   
   
       12 . The antireflective layer of  claim 9  further comprising the antireflective layer comprising amorphous carbon having a boron concentration of between about 5 atom % and about 10 atom %.  
   
   
       13 . The antireflective layer of  claim 9  further comprising a photoresist layer on the antireflective layer.  
   
   
       14 . The antireflective layer of  claim 13  further comprising: 
 a conductive contact location; and    a dielectric layer having an opening therein,    wherein the antireflective layer and the photoresist layer each have openings therein, wherein the openings in the dielectric layer, the antireflective layer, and the photoresist layer are aligned and expose the conductive contact location.    
   
   
       15 . The antireflective layer of  claim 14  wherein the conductive contact location is a conductive contact pad electrically coupled with a doped region within a semiconductor wafer.  
   
   
       16 . The antireflective layer of  claim 9  further having a thickness of between about 150 Å and about 500 Å.