US2006220253A1PendingUtilityA1
Porous film, composition and manufacturing method, interlayer dielectric film, and semiconductor device
Est. expiryMar 27, 2023(expired)· nominal 20-yr term from priority
H10P 14/6922H10P 14/6686H10P 14/6342H10P 14/665C08J 9/0014
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Claims
Abstract
A porous film-forming composition comprising (A) a curable silicone resin having a Mn of at least 100, (B) a micelle-forming surfactant, and (C) a compound which generates an acid upon pyrolysis remains stable during storage. The composition is coated and heat treated to form a porous film which has flatness, uniformity, a low dielectric constant and a high mechanical strength so that it is best suited as an interlayer dielectric film in the fabrication of semiconductor devices.
Claims
exact text as granted — not AI-modified1 . A porous film-forming composition comprising:
(A) 100 parts by weight of a curable silicone resin having a number average molecular weight of at least 100; (B) 5 to 50 parts by weight of a micelle-forming surfactant; and (C) 0.01 to 10 parts by weight of a compound which generates an acid upon pyrolysis.
2 . The composition of claim 1 , wherein the curable silicone resin (A) comprises at least 10 mol % of structural units derived by hydrolytic condensation of a silane having the general formula (1):
SiZ 4 (1)
wherein Z is a hydrolyzable group or a partial hydrolytic condensate thereof.
3 . The composition of claim 1 , wherein the compound (C) generates an acid upon pyrolysis at a pyrolytic temperature which is lower than the decomposition temperature or boiling point of the micelle-forming surfactant (B).
4 . The composition of claim 3 , wherein the pyrolytic temperature of the compound (C) is up to 150° C.
5 . The composition of claim 4 , wherein the compound (C) is a diazo compound of the general formula (3) or (4):
wherein R 1 and R 2 are each independently a substituted or unsubstituted monovalent hydrocarbon group.
6 . The composition of claim 5 , wherein the diazo compound is selected from compounds of the formulae (5) to (10).
7 . The composition of claim 1 , further comprising a solvent.
8 . A method of manufacturing a porous film, comprising:
a step of applying the composition of claim 1 to a substrate to form a coating; a first stage of heat treatment of the coating at a temperature which is lower than the decomposition temperature or boiling point of component (B) and equal to or higher than the pyrolytic temperature of component (C); and a second stage of heat treatment of the coating at a temperature which is equal to or higher than the decomposition temperature or boiling point of component (B).
9 . A porous film obtained using the composition of claim 1 .
10 . An interlayer dielectric film obtained using the composition of claim 1.Join the waitlist — get patent alerts
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