Method for producing a micromechanical device and a micromechanical device

Abstract

A method for manufacturing a micromechanical device and a resulting micromechanical device are provided, the device having a substrate material, a membrane, and a cavity situated between the substrate and the membrane in a membrane cavity area. In this method, holes are first produced through the membrane in a first etching step, and the cavity is subsequently produced using a second etching step.

1 - 12 . (canceled)  
   
   
       13 . A method for manufacturing a micromechanical device having a substrate material and a membrane layer provided on the substrate material, wherein a cavity is provided between the substrate material and the membrane layer in a membrane cavity area, comprising: 
 providing holes in the membrane layer via a first anisotropic etching process; and    providing the cavity via a second isotropic etching process.    
   
   
       14 . The method as recited in  claim 13 , wherein a portion of the substrate material is provided as a sacrificial layer, and wherein, in the first anisotropic etching process, the holes are provided to extend into the sacrificial layer.  
   
   
       15 . The method as recited in  claim 14 , wherein the method is CMOS-compatible.  
   
   
       16 . The method as recited in  claim 15 , wherein the first anisotropic etching process includes a deep reactive ion etching.  
   
   
       17 . The method as recited in  claim 15 , wherein the second isotropic etching process includes one of: a) use of one XeF 2 , ClF 3 , BrF 3  and SF 6  plasma; and b) a wet chemical etching using one of tetramethylammonium hydroxide, KOH, and a combination of HNO 3  and HF.  
   
   
       18 . The method as recited in  claim 16 , further comprising: 
 sealing the holes in the membrane layer after the second isotropic etching process, using one of a cover layer placed directly on the membrane layer surface and a cover positioned over the membrane layer.    
   
   
       19 . The method as recited in  claim 18 , further comprising: 
 providing one of on and in the membrane layer, before the first anisotropic etching process, a component to be thermally insulated from the substrate material.    
   
   
       20 . The method as recited in  claim 17 , further comprising: 
 sealing the holes in the membrane layer after the second isotropic etching process, using one of a cover layer placed directly on the membrane layer surface and a cover positioned over the membrane layer.    
   
   
       21 . The method as recited in  claim 20 , further comprising: 
 providing one of on and in the membrane layer, before the first anisotropic etching process, a component to be thermally insulated from the substrate material.    
   
   
       22 . A micromechanical device, comprising: 
 a substrate material; and    a membrane layer provided on the substrate material;    wherein a cavity is provided between the substrate material and the membrane layer in a membrane cavity area, the cavity being provided by producing holes via a first anisotropic etching process in the membrane layer and a portion of the substrate material provided as a sacrificial layer and subsequently performing a second isotropic etching process, and wherein the first anisotropic etching process includes a deep reactive ion etching, and wherein the second isotropic etching process includes one of: a) use of one XeF 2 , ClF 3 , BrF 3  and SF 6  plasma; and b) a wet chemical etching using one of tetramethylammonium hydroxide, KOH, and a combination of HNO 3  and HF.    
   
   
       23 . The device as recited in  claim 22 , wherein the membrane layer is insulated thermally from the substrate material.  
   
   
       24 . The device as recited in  claim 23 , wherein the substrate material is one of a silicon substrate and a silicon-on-insulator substrate.  
   
   
       25 . The device as recited in  claim 24 , wherein the depth of the cavity substantially corresponds to the depth of the holes within the substrate material.  
   
   
       26 . The device as recited in  claim 24 , further comprising at least one thermally insulated component provided one of on and in the membrane layer.