Semiconductor device and electronic device

Abstract

This invention provides a high frequency power module which is incorporated into a mobile phone and which incorporates high frequency portion analogue signal processing ICs including low noise amplifiers which amplify an extremely weak signal therein. A semiconductor device includes a sealing body which is made of insulation resin, a plurality of leads which are provided inside and outside the sealing body, a tab which is provided inside the sealing body and has a semiconductor element fixing region and a wire connection region on a main surface thereof, a semiconductor element which is fixed to the semiconductor element fixing region and includes electrode terminals on an exposed main surface, conductive wires which connect electrode terminals of the semiconductor element and the leads, and conductive wires which connect electrode terminals of the semiconductor element and the wire connecting region of the tab. In such a semiconductor device, a circuit formed in the semiconductor element in a monolithic manner is comprised of a plurality of circuit parts and, in a specified circuit part (a low noise amplifier) which forms a portion of the circuit parts, all grounding electrode terminals out of electrode terminals of the semiconductor element are not connected to the tab through wires but are connected with the leads through wires.

1 - 54 . (canceled)  
     
     
         55 . A semiconductor device for use in a radio communication device, comprising: 
 a semiconductor chip including a modulator, a demodulator, a first differential low noise amplifier, and a second differential low noise amplifier;    a chip mounting portion over which the semiconductor chip is mounted;    a plurality of leads disposed around the chip mounting portion; and    a resin sealing body covering the semiconductor chip, parts of the leads, and part of the chip mounting portion,    wherein the first and second low noise amplifiers are disposed side by side,    each of the first and second low noise amplifiers has a pair of radio signal inputs,    a first pair of electrodes for the pair of radio signal inputs of the first low noise amplifier are disposed on a main surface of the semiconductor chip side by side,    a second pair of electrodes for the pair of radio signal inputs of the second low noise amplifier are disposed on a main surface of the semiconductor chip side by side,    a fifth electrode for a predetermined potential is disposed on a main surface of the semiconductor chip,    the first pair of electrodes are electrically connected with a first pair of leads of the plurality of leads via a first pair of conductive wires, respectively,    the second pair of electrodes are electrically connected with a second pair of leads of the plurality of leads via a second pair of conductive wires, respectively,    the fifth electrode is electrically connected to a fifth conductive wire, and    the fifth electrode is between the first and second pairs of electrodes, and the fifth conductive wire is between the first and second pairs of wires.    
     
     
         56 . The semiconductor device according to  claim 55 , wherein the predetermined potential is ground potential.  
     
     
         57 . The semiconductor device according to  claim 55 , wherein the semiconductor device has a Quad Flat Non-Leaded (QFN) structure.  
     
     
         58 . The semiconductor device according to  claim 55 , wherein the leads of said first and second pairs of leads are bent in plan view.  
     
     
         59 . The semiconductor device according to  claim 55 , wherein the first and second low noise amplifiers process a radio signal received by an antenna.  
     
     
         60 . The semiconductor device according to  claim 55 , wherein semiconductor device is electrically coupled with a base band circuit, an output signal from the demodulator is inputted into the base band circuit, and an output signal from the base band circuit is inputted into the modulator.  
     
     
         61 . The semiconductor device according to  claim 55 , wherein the chip mounting portion is exposed from a back surface of the resin sealing body.  
     
     
         62 . A semiconductor device for use in a radio communication device, comprising: 
 a semiconductor chip including a modulator, a demodulator, a first differential low noise amplifier, and a second differential low noise amplifier;    a chip mounting portion over which the semiconductor chip is mounted;    a plurality of leads disposed along the chip mounting portion; and    a resin sealing body covering the semiconductor chip, parts of the leads, and part of the chip mounting portion,    wherein each of the first and second low noise amplifiers has a pair of radio signal inputs,    a first pair of electrodes for the pair of radio signal inputs of the first low noise amplifier are disposed on a main surface of the semiconductor chip, the first pair of electrodes including a first electrode and a second electrode,    a second pair of electrodes for the pair of radio signal inputs of the second low noise amplifier are disposed on a main surface of the semiconductor chip, the second pair of electrodes including a third electrode and a fourth electrode,    a fifth electrode for a predetermined potential is disposed on a main surface of the semiconductor chip,    the first to fifth electrodes are arranged along a lengthwise direction of a side of the semiconductor chip in the following order: the first electrode, the second electrode, the fifth electrode, the third electrode, and the fourth electrode,    the first pair of electrodes are electrically connected with a first pair of leads of the plurality of leads via a first pair of conductive wires, respectively,    the second pair of electrodes are electrically connected with a second pair of leads of the plurality of leads via a second pair of conductive wires, respectively,    the fifth electrode is electrically connected to a fifth conductive wire, and    the fifth conductive wire is between the first and second pairs of wires.    
     
     
         63 . The semiconductor device according to  claim 62 , wherein the predetermined potential is ground potential.  
     
     
         64 . The semiconductor device according to  claim 62 , wherein the semiconductor device has a Quad Flat Non-Leaded (QFN) structure.  
     
     
         65 . The semiconductor device according to  claim 62 , wherein the leads of said first and second pairs of leads are bent in plan view.  
     
     
         66 . The semiconductor device according to  claim 62 , wherein the first and second low noise amplifiers process a radio signal received by an antenna.  
     
     
         67 . The semiconductor device according to  claim 62 , wherein semiconductor device is electrically coupled with a base band circuit, an output signal from the demodulator is inputted into the base band circuit, and an output signal from the base band circuit is inputted into the modulator.  
     
     
         68 . The semiconductor device according to  claim 62 , wherein the chip mounting portion is exposed from a back surface of the resin sealing body.