US2006237839A1PendingUtilityA1

Apparatus for conducting heat in a flip-chip assembly

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Assignee: AKRAM SALMANPriority: Jun 20, 2001Filed: Jun 7, 2006Published: Oct 26, 2006
Est. expiryJun 20, 2021(expired)· nominal 20-yr term from priority
Inventors:Salman AkramAlan G. Wood
H10W 72/9415H10W 72/942H10W 72/952H10W 72/9223H10W 72/923H10W 72/29H10W 72/01953H10W 72/01931H10W 70/05H10W 72/073H10W 72/20H10W 72/07236H10W 72/07234H10W 72/252H10W 74/129H10W 72/012H10W 40/254H10W 74/43
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Claims

Abstract

An apparatus for thermally conducting heat from a semiconductor device, namely, a flip-chip assembly. In one embodiment, a heat sink, such as a diamond layer having openings therein, is provided over a surface of a semiconductor device. Conductive pads are formed in the openings to be partially contacting the diamond layer and to electrically communicate with the semiconductor device. The heat produced from the semiconductor device and thermally conducting through the conductive pads is thermally conducted to the heat sink or diamond layer and away from the interconnections, i.e., solder bump connections, between a semiconductor device and a carrier substrate in a flip-chip assembly. As a result, thermal fatigue is substantially prevented in a flip-chip assembly.

Claims

exact text as granted — not AI-modified
1 . A semiconductor device assembly comprising: 
 a substrate having a surface having a layer comprising a first layer and a second layer, the first layer comprising substantially diamond provided over at least a portion of the surface of the substrate having at least one aperture therein, and having at least one contact pad having a periphery, the at least one contact pad having at least a portion thereof extending at least partially over the first layer comprising substantially diamond adjacent the at least one aperture therein and having at least a portion thereof extending through the at least one aperture in the first layer comprising substantially diamond connected to at least one circuit on the substrate, a second layer comprising substantially diamond located between the substrate and the first layer comprising substantially diamond.    
     
     
         2 . The assembly according to  claim 1 , further comprising: 
 a passivation layer located between the first layer comprising substantially diamond and the second layer comprising substantially diamond.    
     
     
         3 . The assembly according to  claim 2 , wherein the passivation layer has at least a portion of at least one trace located thereon to connect the substrate and the at least one contact pad.  
     
     
         4 . The assembly according to  claim 2 , further comprising: 
 a film comprising diamond formed between the passivation layer and the substrate, the film directly contacting the surface of the substrate.    
     
     
         5 . The assembly according to  claim 1 , wherein the second layer includes a layer between the first layer and the second layer.  
     
     
         6 . The assembly according to  claim 5 , wherein the second layer has at least one trace connecting the substrate and the at least one contact pad.  
     
     
         7 . The heat sink according to  claim 6 , wherein the passivation layer includes at least a portion of one trace connecting the substrate and the at least one pad.  
     
     
         8 . The heat sink according to  claim 6 , further comprising: 
 a film including diamond formed between the passivation layer and the substrate, the film contacting the substrate.    
     
     
         9 . The assembly according to  claim 6 , wherein the passivation layer comprises a second layer comprising substantially diamond located between a semiconductor device and the second layer comprising substantially diamond.  
     
     
         10 . A semiconductor device assembly comprising: 
 a semiconductor device having an active surface, having a layer comprising substantially diamond provided over at least a portion of the active surface of the semiconductor device having at least one aperture therein, and having at least one bond pad having a periphery located on the active surface, the at least one bond pad having at least a portion thereof extending at least partially over the layer comprising substantially diamond adjacent the at least one aperture therein and having at least a portion thereof extending at least through a portion of the at least one aperture in the layer comprising substantially diamond, the at least one bond pad connected to at least one circuit on the semiconductor device.    
     
     
         11 . The assembly according to  claim 10 , further comprising: 
 a second layer comprising substantially diamond located between the semiconductor device and the layer comprising substantially diamond.    
     
     
         12 . The assembly according to  claim 11 , wherein at least one of the layer comprising substantially diamond and the second layer comprising substantially diamond has at least a portion of one trace located on a portion thereof to connect the substrate and the at least one bond pad.  
     
     
         13 . The assembly according to  claim 11 , further comprising: 
 a passivation layer located between the layer comprising substantially diamond and the second layer comprising substantially diamond.    
     
     
         14 . The assembly according to  claim 13 , wherein the passivation layer has at least a portion of at least one trace located thereon to connect the substrate and the at least one bond pad.  
     
     
         15 . The assembly according to  claim 13 , further comprising: 
 a film comprising diamond formed between the passivation layer and the semiconductor device, the film directly contacting the active surface of the semiconductor device.    
     
     
         16 . A semiconductor die assembly comprising: 
 a semiconductor die having an active surface, a layer having at least one aperture therein, the layer including diamond provided substantially over a portion of the active surface of the semiconductor die, and at least one bond pad having at least a portion thereof extending at least partially over the layer and having a portion thereof extending at least into the at least one aperture in the layer; and    a substrate having the semiconductor die attached thereto.    
     
     
         17 . The assembly according to  claim 16 , further comprising: 
 a second layer including diamond located between the semiconductor die and the layer.    
     
     
         18 . The assembly according to  claim 17 , wherein at least one of the layer and the second layer has at least one trace connecting the semiconductor die and the at least one bond pad.  
     
     
         19 . The assembly according to  claim 18 , further comprising: 
 a passivation layer located between the layer and the second layer.    
     
     
         20 . The assembly according to  claim 19 , wherein the passivation layer has at least one trace connecting the semiconductor die and the at least one bond pad.  
     
     
         21 . The assembly according to  claim 19 , further comprising: 
 a film including diamond formed between the passivation layer and the semiconductor die, the film contacting the active surface of the semiconductor die.    
     
     
         22 . A heat sink disposed on a semiconductor device comprising: 
 a layer including diamond disposed on at least a portion of an active surface of a semiconductor device, the layer including at least one opening therein; and    at least one bond pad located on at least a portion of the active surface of the semiconductor device, the at least one bond pad having a portion thereof extending over at least a portion of the layer and having another portion thereof located in the at least one opening.    
     
     
         23 . The heat sink according to  claim 22 , further comprising: 
 a passivation layer comprising a second layer including diamond located between the semiconductor device and the layer.    
     
     
         24 . The heat sink according to  claim 23 , wherein at least one of the layer and the second layer has at least one trace connecting the semiconductor device and the at least one bond pad.  
     
     
         25 . The heat sink according to  claim 24 , further comprising: 
 a passivation layer located between the layer and the second layer.    
     
     
         26 . The heat sink according to  claim 25 , wherein the passivation layer has at least one trace connecting the semiconductor device and the at least one bond pad.  
     
     
         27 . The heat sink according to  claim 22 , further comprising: 
 a film including diamond formed between the passivation layer and the semiconductor device, the film contacting the semiconductor device.    
     
     
         28 . A semiconductor die comprising: 
 a substrate having a surface, at least one circuit located on the substrate, a layer including diamond provided over at least a portion of the surface of the substrate having at least one aperture therein, and having at least one contact pad having a periphery, the at least one contact pad having at least a portion thereof extending at least partially over the layer adjacent the at least one aperture therein and having at least a portion thereof extending through the at least one aperture in the layer, the at least one contact pad connected to the at least one circuit on the substrate.    
     
     
         29 . The semiconductor die according to  claim 28 , further comprising: 
 a second layer including diamond located between the substrate and the layer.    
     
     
         30 . The semiconductor die according to  claim 29 , wherein at least one of the layer and the second layer has at least a portion of one trace located on a portion thereof to connect the substrate and the at least one contact pad.  
     
     
         31 . The semiconductor die according to  claim 28 , further comprising: 
 a passivation layer located between the layer and the second layer.    
     
     
         32 . The semiconductor die according to  claim 31 , wherein the passivation layer has at least a portion of at least one trace located thereon to connect the substrate and the at least one contact pad.  
     
     
         33 . The semiconductor die according to  claim 28 , further comprising: 
 a film including diamond formed between a passivation layer and the substrate, the film directly contacting the surface of the substrate.

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