High-temperature superconducting device and manufacturing method thereof

Abstract

At least two ramp-edge-structure Josephson junctions having different critical current densities to one another are provided on a substrate.

1 - 6 . (canceled)  
   
   
       7 . A manufacturing method of a high-temperature superconducting device, comprising the steps of: 
 forming a ramp-edge structure having a plurality of slopes in a same island region provided on a substrate; and    irradiating ion under such a condition that at least a damage to one of said slopes is different from a damage to other said slopes.    
   
   
       8 . The manufacturing method of a high-temperature superconducting device according to  claim 7 , comprising the step of irradiating ion from a specific diagonal direction under a condition that a substrate is not rotated with respect to said island region.  
   
   
       9 . A manufacturing method of a high-temperature superconducting device, comprising the steps of: 
 forming a ramp-edge structure having a plurality of slopes in a same island region provided on a substrate; and    depositing a barrier layer under a condition that at least a thickness of a deposited film over one of said slopes is different from that of a deposited film over other said slopes.    
   
   
       10 . The manufacturing method of a high-temperature superconducting device according to  claim 9 , comprising the step of depositing, from a specific diagonal direction and by a sputtering method, a material to form a barrier layer, under a condition that said substrate is not rotated with respect to said island region.