Au alloy bonding wire

Abstract

Provided is a gold alloy bonding wire for semiconductor packaging. The gold alloy bonding wire is formed of gold having an ultrahigh purity of 99.999% or more. The gold alloy includes at least one of Mo, As, Po, and B within a range between 2 wt ppm and 25 wt ppm. The gold alloy may further include at least one of Na, Cd, Sb, Ta, and Cs within a range between 2 wt ppm and 30 wt ppm. The gold alloy may further include at least one of P, Tc, Re, Tl, and Ho within a range between 3 wt ppm and 30 wt ppm. The gold alloy may further include at least one of Na, Cd, Sb, Ta, and Cs within a range between 2 wt ppm and 30 wt ppm and at least one of P, Tc, Re, Tl, and Ho within a range between 3 wt ppm and 30 wt ppm.

1 . A gold (Au) alloy bonding wire in which at least one of Mo, As, Po, and B is added to high-purity gold of 99.999% or more in an amount of 2-25 parts per million by weight (wt ppm) to the high-purity gold.  
     
     
         2 . A gold alloy bonding wire in which at least one of Na, Cd, Sb, Ta, and Cs is added to high-purity gold of 99.999% or more in an amount of 2-30 wt ppm to the high-purity gold.  
     
     
         3 . A gold alloy bonding wire in which at least one of P, Tc, Re, Tl, and Ho is added to high-purity gold of 99.999% or more in an amount of 3-30 wt ppm to the high-purity gold.  
     
     
         4 . The gold alloy bonding wire of  claim 1 , wherein at least one of Na, Cd, Sb, Ta, and Cs is further added to the high-purity gold in an amount of 2-30 wt ppm.  
     
     
         5 . The gold alloy bonding wire of  claim 1 , wherein at least one of Pd in an amount of 30-90 wt ppm and Ca in an amount of 20-90 wt ppm is further added to the high-purity gold.  
     
     
         6 . The gold alloy bonding wire of  claim 1 , wherein at least one of P, Tc, Re, Tl, and Ho is further added to the high-purity gold in an amount of 3-30 wt ppm.  
     
     
         7 . The gold alloy bonding wire of  claim 6 , wherein at least one of Ni and Cu is further added to the high-purity gold in an amount of 20-90 wt ppm.  
     
     
         8 . The gold alloy bonding wire of  claim 2 , wherein at least one of P, Tc, Re, Tl, and Ho is further added to the high-purity gold in an amount of 3-30 wt ppm.  
     
     
         9 . The gold alloy bonding wire of  claim 8 , wherein at least one of Ni and Cu is further added to the high-purity gold in an amount of 20-90 wt ppm.  
     
     
         10 . The gold alloy bonding wire of  claim 4 , wherein at least one of P, Tc, Re, Tl, and Ho is further added to the high-purity gold in an amount of 3-30 wt ppm.  
     
     
         11 . The gold alloy bonding wire of  claim 10 , wherein at least one of Ni and Cu is further added to the high-purity gold in an amount of 20-90 wt ppm.