US2006279904A1PendingUtilityA1

Decoupling capacitor for an integrated circuit and method of manufacturing thereof

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Assignee: SILICON BANDWIDTH INCPriority: Sep 24, 2004Filed: Aug 21, 2006Published: Dec 14, 2006
Est. expirySep 24, 2024(expired)· nominal 20-yr term from priority
Y10T29/43H05K 7/1092Y10T29/49128Y10T29/49139H01G 4/35H01G 4/232H10W 90/724H10W 72/9415H10W 72/942H10W 72/923H10W 72/90H10W 72/00
42
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Claims

Abstract

A capacitor structure may be incorporated into an interposer or substrate associated with an IC chip to stabilize the input/output signals, such as power and ground, between the IC chip and a printed circuit board. In accordance with one embodiment, the capacitor structure may include a plurality of individual capacitors connected together to form a monolithic capacitor blade having a length, width, and height, wherein each of the length and height of the blade spans multiple of the individual capacitors. The blade includes multiple electrical conductive paths extending the height of the capacitor blade. According to another embodiment, the capacitor structure includes multiple interleaved power and ground layers separated by insulating layers. The power layers connect to power leads and the ground layers connect to ground leads.

Claims

exact text as granted — not AI-modified
1 - 125 . (canceled)  
   
   
       126 . A method for manufacturing a capacitor module, comprising: 
 forming an stack of alternating conductive power layers and conductive ground layers, with insulating layers in between the power layers and ground layers, each of power, ground, and insulating layers having holes formed therein; and    inserting leads into the stack, wherein a first set of the leads electrically connects to the power layers but not the ground layers and a second set of the leads electrically connects to the ground layers but not the power layers.    
   
   
       127 . A method for manufacturing a substrate, comprising: 
 forming an insulating body having a landing pads on first and second sides thereof that are electrically connected with conductive paths, the insulating body having an aperture therethrough; and    inserting an capacitor module in the aperture, the capacitor module comprising a plurality of conductive power layers, a plurality of conductive ground layers, and a plurality of insulative layers, a first set of leads, and a second set of leads, wherein the power and ground layers alternate along a dimension of the capacitor module, with at least one of the insulative layers located between the alternating power and ground layers, and the first set of leads electrically connect to the power layers and the second set of leads electrically connect to the ground layers.    
   
   
       128 . A method for manufacturing an interposer, comprising: 
 forming an insulative main body adapted to support a semiconductor die;    inserting electrically conductive pins into holes in the insulative main body; and    providing at least one capacitor module in the main body, the capacitor module comprising a plurality of conductive power layers, a plurality of conductive ground layers, and a plurality of insulative layers, a first set of leads, and a second set of leads, wherein the power and ground layers alternate along a dimension of the capacitor module, with at least one of the insulative layers located between the alternating power and ground layers, and the first set of leads electrically connect to the power layers and the second set of leads electrically connect to the ground layers.    
   
   
       129 . The method of  claim 128 , wherein the step of providing a capacitor module comprises inserting the capacitor module in an aperture in the main body.  
   
   
       130 . The method of  claim 129 , further comprising the step of providing a semiconductor die on the main body, wherein the semiconductor die electrically connects to the electrically conductive pins, to the power leads, and to the ground leads.  
   
   
       131 . The method of  claim 129 , further comprising the step of providing a substrate on the main body and a semiconductor die on the substrate, wherein the semiconductor die electrically connects to the electrically conductive pins, to the power leads, and to the ground leads through at least the substrate.  
   
   
       132 . The method of  claim 128 , wherein the step of forming the main body comprises forming a main body having buttresses projecting at a lower surface thereof.  
   
   
       133 . The method of  claim 132 , wherein the step of inserting conductive pins comprises inserting the conductive pins so as to extend at least partially along longitudinal axes of the buttresses.  
   
   
       134 . The method of  claim 128 , wherein the step of inserting conductive pins comprises inserting pin modules into the holes of the main body.  
   
   
       135 . The method of  claim 134 , wherein each pin module comprises one of the electrically conductive pins and an insulative material provided axially around the pin.  
   
   
       136 . The method of  claim 135 , wherein each pin module further comprises a conductive material provided axially around the insulative material.  
   
   
       137 . The method of  claim 134 , wherein each pin module comprises two of the electrically conductive pins and an insulative material provided around the pins.  
   
   
       138 . The method of  claim 137 , wherein each pin module further comprises a conductive material provided around the insulative material.  
   
   
       139 . The method of  claim 134 , wherein each pin module comprises four of the electrically conductive pins and an insulative material provided around the pins.  
   
   
       140 . The method of  claim 139 , wherein each pin module further comprises a conductive material provided around the insulative material.  
   
   
       141 . The method of  claim 139 , wherein each pin module further comprises a column.

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