Anodic bonding process for ceramics

Abstract

A bonded component structure comprising the following. A first ceramic component having a first conductive layer thereover. An intermediate film over the first conductive layer. A second ceramic component having a second conductive layer is formed thereover anodically bonded to the first ceramic component wherein the second conductive layer opposes the intermediate film. At least one transition layer upon at least one of the first and second ceramic components.

1 . A bonded component structure, comprising: 
 a first ceramic component having a first conductive layer thereover, the first ceramic component having an upper and lower surface;    an intermediate film over the first conductive layer;    a second ceramic component having a second conductive layer thereover anodically bonded to the first ceramic component wherein the second conductive layer opposes the intermediate film, the second ceramic component having an upper and lower surface; and    at least one transition layer upon at least one of the first and second ceramic components.    
     
     
         2 . The structure of  claim 1 , wherein the upper and lower surfaces of the first and second ceramic components are polished surfaces.  
     
     
         3 . The structure of  claim 1 , wherein the upper and lower surfaces of the first and second ceramic components are cleansed surfaces.  
     
     
         4 . The structure of  claim 1 , wherein the upper and lower surfaces of the first and second ceramic components are polished and cleansed surfaces.  
     
     
         5 . The structure of  claim 1 , wherein at least one of the first and second ceramic components are cleansed.  
     
     
         6 . The structure of  claim 1 , wherein the at least one transition layer is Al x O y , Ti x C y , Ti or TiW.  
     
     
         7 . The structure of  claim 1 , wherein at least one respective transition layer is formed upon both the first and second ceramic components.  
     
     
         8 . The structure of  claim 1 , wherein at least one respective transition layer is formed upon both the first and second ceramic components and the at least one respective transition layer is Al x O y , Ti x C y , Ti or TiW.  
     
     
         9 . The structure of  claim 1 , wherein the first and second ceramic components are comprised of: 
 glass;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         10 . The structure of  claim 1 , wherein the first and second ceramic components are comprised of: 
 quartz;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         11 . The structure of  claim 1 , wherein the first and second ceramic components are comprised of: 
 alumina;    titanium carbide;    silica (SiO 2 );    silicon nitride (Si 3 N 4 );    soda lime; or    borosilicate.    
     
     
         12 . The structure of  claim 1 , wherein the first and second ceramic components are each comprised of the same material.  
     
     
         13 . The structure of  claim 1 , wherein the first and second ceramic components are each comprised of a different material.  
     
     
         14 . The structure of  claim 1 , wherein the first and second conductive layers are metallic or semiconductive.  
     
     
         15 . The structure of  claim 1 , wherein the first and second conductive layers are comprised of Al, Cr, W, Ni, Ti, or alloys thereof, or silicon.  
     
     
         16 . The structure of  claim 1 , wherein the first conductive layer has a thickness of from about 20 nm to 5 μm; and the second conductive layer has a thickness of from about 20 nm to 5 μm.  
     
     
         17 . The structure of  claim 1 , wherein the intermediate film has a thickness of from about 10 nm to 5 μm.  
     
     
         18 . The structure of  claim 1 , wherein at least one of the first and second ceramic components are cleansed to render the at least one of the first and second ceramic components hydrophilic.  
     
     
         19 . The structure of  claim 1 , wherein the structure is employed in: 
 micro electromechanical systems (MEMS);    bio-MEMS and microfluidic devices;    micro-opto-electro-mechanical system (MOEMS);    substrate fabrication;    semiconductors;    microelectronics;    optoelectronics; or    hermetic and vacuum sealing.    
     
     
         20 . The structure of  claim 1 , wherein the structure is employed in: 
 wafer level MEMS packaging (RF, sensors, actuators et al.);    bio-MEMS (Si and glass systems) and microfluidic devices;    wafer level MOEMS packaging;    multilayer inorganic substrates;    semiconductor-on-insulator, CMOS;    3D integrated circuits (ID); or    optoelectronics: OEIC.    
     
     
         21 . The structure of  claim 1 , wherein the intermediate film includes alkaline ions or does not include alkaline ions.  
     
     
         22 . A bonded component structure, comprising: 
 a first ceramic component having cleansed polished upper and lower surfaces;    a first conductive layer over the cleansed polished upper surface of the first ceramic component;    an intermediate film over the first conductive layer;    a second ceramic component having cleansed polished upper and lower surfaces, the second conductive layer having a second conductive layer over its cleansed polished lower surface, the second ceramic component being anodically bonded to the first ceramic component wherein the second conductive layer opposes the intermediate film; and    at least one transition layer upon at least one of the first and second ceramic components.    
     
     
         23 . The structure of  claim 22 , wherein the at least one transition layer is comprised of Al x O y , Ti x C y , Ti or TiW.  
     
     
         24 . The structure of  claim 22 , wherein at least one respective transition layer is formed upon both the first and second ceramic components.  
     
     
         25 . The structure of  claim 22 , wherein the first and second ceramic components are comprised of: 
 glass;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         26 . The structure of  claim 22 , wherein the first and second ceramic components are comprised of: 
 quartz;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         27 . The structure of  claim 22 , wherein the first and second ceramic components are comprised of: 
 alumina;    titanium carbide;    silica (SiO 2 );    silicon nitride (Si 3 N 4 );    soda lime; or    borosilicate.    
     
     
         28 . The structure of  claim 22 , wherein the first and second ceramic components are each comprised of the same material.  
     
     
         29 . The structure of  claim 22 , wherein the first and second ceramic components are comprised of a different material.  
     
     
         30 . The method of  claim 22 , wherein the first and second conductive layers are metallic or semiconductive.  
     
     
         31 . The structure of  claim 22 , wherein the first and second conductive layers are comprised of Al, Cr, W, Ni, Ti, or alloys thereof, or silicon.  
     
     
         32 . The structure of  claim 22 , wherein the first conductive layer has a thickness of from about 20 nm to 5 μm; and the second conductive layer has a thickness of from about 20 nm to 5 μm.  
     
     
         33 . The structure of  claim 22 , wherein the intermediate film has a thickness of from about 10 nm to 5 μm.  
     
     
         34 . The structure of  claim 22 , wherein at least one of the first and second ceramic components are cleansed to render the at least one of the first and second ceramic components hydrophilic.  
     
     
         35 . The structure of  claim 22 , wherein the structure is employed in: 
 micro electromechanical systems (MEMS);    bio-MEMS and microfluidic devices;    micro-opto-electro-mechanical system (MOEMS);    substrate fabrication;    semiconductors;    microelectronics;    optoelectronics; or    hermetic and vacuum sealing.    
     
     
         36 . The structure of  claim 22 , wherein the structure is employed in: 
 wafer level MEMS packaging (RF, sensors, actuators et al.);    bio-MEMS (Si and glass systems) and microfluidic devices;    wafer level MOEMS packaging;    multilayer inorganic substrates;    semiconductor-on-insulator, CMOS;    3D integrated circuits (ID); or    optoelectronics: OEIC.    
     
     
         37 . The structure of  claim 22 , wherein the intermediate film includes alkaline ions or does not include alkaline ions.  
     
     
         38 . A bonded ceramic component structure, comprising: 
 a first cleansed ceramic component having an upper and lower cleansed and polished surface;    a first transition layer over the cleansed polished upper surface of the first ceramic component;    a first conductive layer over the first transition layer;    an intermediate film over the first conductive layer; the intermediate film including alkaline ions or not including alkaline ions;    a second cleansed ceramic component having a second conductive layer thereover anodically bonded to the first ceramic component wherein the second conductive layer opposes the intermediate film on the first ceramic component, the second ceramic component having an upper and lower cleansed and polished surface; and    a second transition layer over the second cleansed ceramic component cleansed polished lower surface and under the second conductive layer.    
     
     
         39 . The structure of  claim 38 , wherein the first and second transition layers are comprised of Al x O y , Ti x C y , Ti or TiW.  
     
     
         40 . The structure of  claim 38 , wherein the first and second stacked ceramic components are spaced apart using spacers before bonding.  
     
     
         41 . The structure of  claim 38 , wherein the first and second ceramic components are comprised of: 
 glass;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         42 . The structure of  claim 38 , wherein the first and second ceramic components are comprised of: 
 quartz;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         43 . The structure of  claim 38 , wherein the first and second ceramic components are comprised of: 
 alumina;    titanium carbide;    silica (SiO 2 );    silicon nitride (Si 3 N 4 );    soda lime; or    borosilicate.    
     
     
         44 . The structure of  claim 38 , wherein the first and second ceramic components are each comprised of the same material.  
     
     
         45 . The structure of  claim 38 , wherein the first and second ceramic components are comprised of a different material.  
     
     
         46 . The structure of  claim 38 , wherein the first and second conductive layers are metallic or semiconductive.  
     
     
         47 . The structure of  claim 38 , wherein the first and second conductive layers are comprised of Al, Cr, W, Ni, Ti, or alloys thereof, or silicon.  
     
     
         48 . The structure of  claim 38 , wherein the first conductive layer has a thickness of from about 20 nm to 5 μm; and the second conductive layer has a thickness of from about 20 nm to 5 μm.  
     
     
         49 . The structure of  claim 38 , wherein the intermediate film has a thickness of from about 10 nm to 5 μm.  
     
     
         50 . The structure of  claim 38 , wherein at least one of the first or second cleansed ceramic components are hydrophilic.  
     
     
         51 . The structure of  claim 38 , wherein the structure is employed in: 
 micro electromechanical systems (MEMS);    bio-MEMS and microfluidic devices;    micro-opto-electro-mechanical system (MOEMS);    substrate fabrication;    semiconductors;    microelectronics;    optoelectronics; or    hermetic and vacuum sealing.    
     
     
         52 . The structure of  claim 38 , wherein the structure is employed in: 
 wafer level MEMS packaging (RF, sensors, actuators et al.);    bio-MEMS (Si and glass systems) and microfluidic devices;    wafer level MOEMS packaging;    multilayer inorganic substrates;    semiconductor-on-insulator, CMOS;    3D integrated circuits (ID); or    optoelectronics: OEIC.    
     
     
         53 . A bonded component structure, comprising: 
 a first ceramic component having an upper and lower surface,    a conductive layer over the upper surface of the first ceramic component;    an intermediate film over the conductive layer;    a second component having an upper and lower surface anodically bonded to the first ceramic component via the intermediate film, the second component being comprised of a silicon layer or a semiconductor layer; and    at least one transition layer upon at least one of the first ceramic component and the second component, the at least one transition layer being Al x O y , Ti x C y  or TiW.    
     
     
         54 . The structure of  claim 53 , wherein the upper and lower surfaces of the first ceramic component and the second component are polished.  
     
     
         55 . The structure of  claim 53 , wherein the upper and lower surfaces of the first ceramic component and the second component are cleansed.  
     
     
         56 . The structure of  claim 53 , wherein the upper and lower surfaces of the first ceramic component and the second component are cleansed and polished.  
     
     
         57 . The structure of  claim 53 , including at least one respective transition layer upon both the first ceramic component and the second component.  
     
     
         58 . The structure of  claim 53 , wherein the first ceramic component is comprised of: 
 glass;    silicates; 
 oxides;  
 carbides, nitrides and borides of the transition elements; or  
 multiphase composites which may be totally or partially ceramic.  
   
     
     
         59 . The structure of  claim 53 , wherein the first ceramic component is comprised of: 
 quartz;    silicates;    oxides;    carbides, nitrides and borides of the transition elements; or    multiphase composites which may be totally or partially ceramic.    
     
     
         60 . The structure of  claim 53 , wherein the first ceramic component is comprised of: 
 alumina;    titanium carbide;    silica (SiO 2 );    silicon nitride (Si 3 N 4 );    soda lime; or    borosilicate.    
     
     
         61 . The structure of  claim 53  wherein the first ceramic component is glass.  
     
     
         62 . The structure of  claim 53 , wherein the conductive layer is metallic or semiconductive.  
     
     
         63 . The structure of  claim 53 , wherein the conductive layer is comprised of Al, Cr, W, Ni, Ti, or alloys thereof, or silicon.  
     
     
         64 . The structure of  claim 53 , wherein the conductive layer has a thickness of from about 20 nm to 5 μm.  
     
     
         65 . The method of  claim 53 , wherein the intermediate film has a thickness of from about 10 nm to 5 μm.  
     
     
         66 . The structure of  claim 53 , wherein at least one of the first ceramic component and the second component is cleansed and is hydrophilic.  
     
     
         67 . The structure of  claim 53 , wherein the intermediate film includes alkaline ions or does not include alkaline ions.