Manganese doped barium titanate thin film compositions, capacitors, and methods of making thereof

Abstract

The present invention is directed to a dielectric thin film composition comprising: (1) one or more barium/titanium-containing selected from (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in (2) organic medium; and wherein said thin film composition is doped with 0.002 to 0.05 atom percent of a manganese-containing additive.

1 . A dielectric thin film composition comprising: 
 (1) One or more barium/titanium-containing additives selected from the group consisting of (a) barium titanate, (b) any composition that can form barium titanate during firing, and (c) mixtures thereof; dissolved in    (2) organic medium; and    wherein said thin film composition is doped with 0.002 to 0.05 atom percent of a manganese-containing additive.    
     
     
         2 . The composition of  claim 1  wherein the barium in said barium/titanium-containing additive has been partially or substantially replaced by one or more metal cations having the oxide stoichiometry of MO wherein M is selected from the group consisting of (a) strontium; (b) lead; (c) calcium; and (d) mixtures thereof.  
     
     
         3 . The composition of  claim 1  wherein the titanium in said barium/titanium-containing additive has been partially or substantially replaced by one or more metal cations having the oxide stoichiometry of MO 2  wherein M is selected from the group consisting of (a) zirconium; (b) hafnium; (c) tin; and (d) mixtures thereof.  
     
     
         4 . A capacitor comprising the thin film composition of  claim 1  wherein said thin film composition has been fired in a reducing atmosphere without the need for reoxidation.  
     
     
         5 . An innerlayer panel comprising the capacitor of  claim 4 .  
     
     
         6 . A printed wiring board comprising the capacitor of  claim 4 .  
     
     
         7 . A method of making a capacitor comprising: 
 providing a metallic foil;    forming a dielectric over the metallic foil, wherein forming the dielectric comprises: 
 forming a dielectric layer over the foil wherein the dielectric layer is formed from the composition of  claim 1;   
 annealing the dielectric layer; and  
 forming a conductive layer over the dielectric, wherein the metallic foil, the dielectric, and the conductive layer form the capacitor.  
   
     
     
         8 . The method of  claim 7 , wherein annealing comprises annealing at a temperature in the range of about 800 to 1050° C.  
     
     
         9 . The method of  claim 7 , wherein annealing comprises annealing in an environment having an oxygen partial pressure of less than about 10 −8  atmospheres.  
     
     
         10 . The method of  claim 7 , wherein annealing results in a dielectric comprising crystalline barium titanate or crystalline barium strontium titanate.  
     
     
         11 . The method of  claim 7 , wherein the capacitor has a capacitance density of at least 0.5 μF/cm 2 .