Absorber layer for dsa processing

Abstract

A method of processing a substrate comprising depositing a layer comprising amorphous carbon on the substrate and then laser annealing the substrate is provided. Optionally, the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof. In one aspect, the layer comprising amorphous carbon is an anti-reflective coating and an absorber layer that absorbs electromagnetic radiation emitted by the laser and anneals a top surface layer of the substrate.

1 . A method of processing a substrate, comprising: 
 depositing a layer comprising amorphous carbon on the substrate; and then    annealing the substrate, wherein the annealing comprises exposing the substrate to pulses of electromagnetic radiation.    
   
   
       2 . The method of  claim 1 , wherein the annealing the substrate heats a top surface layer of the substrate to a temperature between about 1100° C. and about 1410° C.  
   
   
       3 . The method of  claim 2 , wherein the layer comprising amorphous carbon is deposited from a mixture comprising C 3 H 6 .  
   
   
       4 . The method of  claim 1 , further comprising removing the layer from the substrate after the annealing.  
   
   
       5 . The method of  claim 1 , further comprising implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon.  
   
   
       6 . The method of  claim 5 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting.  
   
   
       7 . The method of  claim 6 , wherein the substrate is annealed for a period of time sufficient to activate the implanted dopant ions.  
   
   
       8 . The method of  claim 1 , wherein the layer comprising amorphous carbon further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof.  
   
   
       9 . The method of  claim 8 , wherein the dopant is nitrogen.  
   
   
       10 . The method of  claim 8 , wherein the layer is deposited at a temperature between about 400° C. and about 500° C.  
   
   
       11 . The method of  claim 8 , wherein the layer is deposited by plasma enhanced chemical vapor deposition.  
   
   
       12 . The method of  claim 8 , further comprising removing the layer from the substrate after the annealing.  
   
   
       13 . The method of  claim 8 , further comprising implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon.  
   
   
       14 . A substrate, processed by a method comprising: 
 depositing a layer comprising amorphous carbon on the substrate; and then    annealing the substrate, wherein the annealing comprises exposing the substrate to pulses of electromagnetic radiation.    
   
   
       15 . The substrate of  claim 14 , wherein the annealing the substrate heats a top surface layer of the substrate to a temperature between about 1100° C. and about 1410° C.  
   
   
       16 . The substrate of  claim 14 , wherein the layer further comprises a dopant selected from the group consisting of nitrogen, boron, phosphorus, fluorine, and combinations thereof.  
   
   
       17 . The substrate of  claim 14 , wherein the layer further comprises nitrogen.  
   
   
       18 . The substrate of  claim 14 , wherein the method further comprises implanting dopant ions into the substrate before the depositing a layer comprising amorphous carbon.  
   
   
       19 . The substrate of  claim 18 , further comprising forming a gate source area and a gate drain area in the substrate before the implanting.  
   
   
       20 . The substrate of  claim 19 , wherein the substrate is annealed for a period of time sufficient to activate the implanted dopant ions.