Semiconductor device

Abstract

In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

1 . A semiconductor device comprising: 
 a semiconductor chip having a square surface;    a wiring substrate having a main surface thereof used for mounting said semiconductor chip;    a first electrode formed on a first area of a main surface of said semiconductor chip and placed at a location in close proximity to a side of said semiconductor chip;    first amplifying means formed on said first area of said main surface of said semiconductor chip and provided with an input unit electrically connected to said first electrode;    a second electrode formed on a second area of said main surface of said semiconductor chip and placed at a location in close proximity to said side of said semiconductor chip;    second amplifying means formed on said second area of said main surface of said semiconductor chip and provided with an output unit electrically connected to said second electrode;    a third electrode formed on a third area between said first and second areas of said main surface of said semiconductor chip;    a fourth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said first electrode by a first wire;    a fifth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said second electrode by a second wire; and    a sixth electrode formed on said main surface of said wiring substrate to face said side of said semiconductor chip and electrically connected to said third electrode by a third wire with an electric potential thereof fixed at a reference level,    wherein said sixth electrode is placed at a location farther from said side of said semiconductor chip than said fifth electrode.    
     
     
         2 - 17 . (canceled)