Semiconductor processing methods

Abstract

In one aspect, the invention encompasses a semiconductor processing method. A layer of material is formed over a semiconductive wafer substrate. Some portions of the layer are exposed to energy while other portions are not exposed. The exposure to energy alters physical properties of the exposed portions relative to the unexposed portions. After the portions are exposed, the exposed and unexposed portions of the layer are subjected to common conditions. The common conditions are effective to remove the material and comprise a rate of removal that is influenced by the altered physical properties of the layer. The common conditions remove either the exposed or unexposed portions faster than the other of the exposed and unexposed portions. After the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, the wafer is cut into separated die. In another aspect, the invention encompasses another semiconductor processing method. A layer of (CH 3 ) y Si(OH) 4-y is formed over a substrate. Some portions of the layer are exposed to ultraviolet light while other portions are not exposed. The exposure to ultraviolet light converts the exposed portions to (CH 3 ) x SiO 2-x . After the exposure to ultraviolet light, the exposed and unexposed portions of the layer are subjected to hydrofluoric acid to selectively remove the (CH 3 ) y Si(OH) 4-y of the unexposed portions relative to the (CH 3 ) x SiO 2-x of the exposed portions.

1 . A semiconductor processing method, comprising: 
 forming a layer of material over a semiconductive wafer substrate;    exposing some portions of the layer to energy while leaving other portions unexposed, the exposing altering physical properties of the exposed portions of material relative to the unexposed portions of material;    after the exposing, subjecting the exposed and unexposed portions of the layer to common conditions, the common conditions being effective to remove the material and comprising a rate of removal that is influenced by the altered physical properties of the layer, the common conditions removing either the exposed or unexposed portions faster than the other of the exposed and unexposed portions; and    after the selective removal of the exposed or unexposed portions, and while the other of the exposed and unexposed portions remains over the substrate, cutting the wafer into separated die.    
   
   
       2 . The method of  claim 1  wherein the material comprises silicon.  
   
   
       3 . The method of  claim 1  wherein the material comprises carbon, silicon and oxygen.  
   
   
       4 . The method of  claim 1  wherein the material comprises silicon bound to a hydrocarbon group and bound to oxygen.  
   
   
       5 . The method of  claim 1  wherein the material comprises (CH 3 ) y Si(OH) 4-y , with y being greater than 0 and less than 4.  
   
   
       6 . The method of  claim 1  wherein the material comprises Si(OH) 4 .  
   
   
       7 . The method of  claim 1  wherein the energy is in the form of ultraviolet light.  
   
   
       8 . The method of  claim 1  wherein the energy is in the form of an electron beam.  
   
   
       9 . The method of  claim 1  wherein the energy is in the form of a plasma.  
   
   
       10 - 29 . (canceled)  
   
   
       30 . The method of  claim 1  wherein the forming a layer comprises depositing a layer of material comprising (CH 3 ) y Si(OH) 4-y , as initially deposited, with y being greater than 0 and less than 4.  
   
   
       31 . The method of  claim 1  wherein the forming a layer comprises depositing a layer of material comprising Si(OH) 4 , as initially deposited.