Methods of utilizing magnetoresistive memory constructions

Abstract

The invention includes a method of forming a magnetoresistive memory device having a memory bit stack. The stack includes a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers. A first conductive line is proximate the stack and configured for utilization in reading information from the memory bit. The first conductive line is ohmically connecting with either the first or second magnetic layer. A second conductive line is spaced from the stack by a sufficient distance that the second conductive line is not ohmically connected to the stack, and is configured for utilization in writing information to the memory bit. The invention also includes methods of storing and retrieving information.

1 - 47 . (canceled)  
   
   
       48 . A method of utilizing a magnetoresistive memory construction, comprising: 
 providing the magnetoresistive memory construction to include: 
 a memory bit comprising a stack which includes a first magnetic layer, a second magnetic layer, and a non-magnetic layer between the first and second magnetic layers; the memory bit storing information as a relative orientation of a magnetic moment in the first magnetic layer to a magnetic moment in the second magnetic layer;  
 a first conductive line proximate the stack and configured for utilization in reading information from the memory bit;  
 a second conductive line on an opposing side of the first conductive line from the stack and thus spaced from the stack by at least a thickness of the first conductive line combined with any distance by which the first conductive line is spaced from the stack; the second conductive line being configured for utilization in writing information to the memory bit; and  
 the first and second conductive lines extending longitudinally parallel to one another;  
   utilizing the first conductive line for reading information from the memory bit, but not in writing information to the memory bit; and    utilizing the second conductive line for writing information to the memory bit, but not in reading information from the memory bit.    
   
   
       49 . The method of  claim 48  wherein the first conductive line is in ohmic electrical contact with at least one of the magnetic layers of the memory bit, and wherein the second conductive line is not in ohmic electrical contact with either of the magnetic layers of the memory bit.  
   
   
       50 . The method of  claim 48  wherein the first and second magnetic layers comprise one or more of nickel, iron, cobalt, iridium, manganese, platinum and ruthenium.  
   
   
       51 . The method of  claim 48  wherein the non-magnetic layer comprises an electrically insulative material.  
   
   
       52 . The method of  claim 48  wherein the non-magnetic layer comprises an electrically conductive material.  
   
   
       53 . The method of  claim 48  wherein the first conductive line physically contacts one of the first and second magnetic layers.  
   
   
       54 . The method of  claim 48  wherein the magnetoresistive memory construction further includes an electrically insulative material between the first and second conductive lines; and wherein the second conductive line is thus spaced from the stack by at least a combined thickness of the electrically insulative material and the first conductive line.  
   
   
       55 . The method of  claim 54  wherein the electrically insulative material comprises a layer which includes one or both of silicon dioxide and silicon nitride, and which is at least about 100 Å thick.  
   
   
       56 . The method of  claim 48  wherein the magnetoresistive memory construction further includes a third conductive line proximate the stack; and wherein the third conductive line is utilized in both writing information to the memory bit and reading information from the memory bit.  
   
   
       57 . The method of  claim 56  wherein the first conductive line physically contacts one of the first and second magnetic layers, and wherein the third conductive line physically contacts the other of the first and second magnetic layers.  
   
   
       58 . The method of  claim 56  wherein the magnetoresistive memory construction further includes an electrically insulative material between the first and second conductive lines, and wherein: 
 the first conductive line physically contacts one of the first and second magnetic layers; and    the third conductive line physically contacts the other of the first and second magnetic layers.