Inventor · disambiguated record
Hasan Nejad
Also filed as: NEJAD HASAN
35 granted patents·3 pending applications·769 citations·filing 2002–2012
98Inventor score
Top patents by PatentIndex Score
38 records- 0198US7339811B2Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operationMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 4, 2008·71 cites·4 claims
- 0298US6882566B2Stacked 1T-nMTJ MRAM structureMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 19, 2005·142 cites·7 claims
- 0397US6882553B2Stacked columnar resistive memory structure and its method of formation and operationMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 19, 2005·89 cites·55 claims
- 0496US7214621B2Methods of forming devices associated with semiconductor constructionsMICRON TECHNOLOGY INC·Filed 2005·Granted May 8, 2007·79 cites·29 claims
- 0595US7023743B2Stacked columnar 1T-nMTJ structure and its method of formation and operationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 4, 2006·68 cites·8 claims
- 0690US7989251B2Variable resistance memory device having reduced bottom contact area and method of forming the sameMICRON TECHNOLOGY INC·Filed 2007·Granted Aug 2, 2011·11 cites·16 claims
- 0790US7339812B2Stacked 1T-nmemory cell structureMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 4, 2008·21 cites·23 claims
- 0889US6940748B2Stacked 1T-nMTJ MRAM structureMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 6, 2005·37 cites·49 claims
- 0989US6716644B2Method for forming MRAM bit having a bottom sense layer utilizing electroless platingMICRON TECHNOLOGY INC·Filed 2002·Granted Apr 6, 2004·29 cites·40 claims
- 1088US7440339B2Stacked columnar 1T-nMTj MRAM structure and its method of formation and operationMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 21, 2008·13 cites·9 claims
- 1186US6879516B2Stacked columnar 1T-nMTJ MRAM structure and its method of formation and operationMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 12, 2005·26 cites·17 claims
- 1281US7209378B2Columnar 1T-N memory cell structureMICRON TECHNOLOGY INC·Filed 2004·Granted Apr 24, 2007·23 cites·60 claims
- 1379US7547559B2Method for forming MRAM bit having a bottom sense layer utilizing electroless platingMICRON TECHNOLOGY INC·Filed 2007·Granted Jun 16, 2009·6 cites·15 claims
- 1479US6828639B2Process flow for building MRAM structuresMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 7, 2004·23 cites·52 claims
- 1578US7557032B2Silicided recessed siliconMICRON TECHNOLOGY INC·Filed 2005·Granted Jul 7, 2009·6 cites·12 claims
- 1677US7042749B2Stacked 1T-nmemory cell structureMICRON TECHNOLOGY INC·Filed 2003·Granted May 9, 2006·22 cites·43 claims
- 1776US7977236B2Method of forming a transistor gate of a recessed access device, method of forming a recessed transistor gate and a non-recessed transistor gate, and method of fabricating an integrated circuitMICRON TECHNOLOGY INC·Filed 2009·Granted Jul 12, 2011·5 cites·16 claims
- 1876US7387959B2Method of fabricating integrated circuitryMICRON TECHNOLOGY INC·Filed 2005·Granted Jun 17, 2008·5 cites·10 claims
- 1976US6735111B2Magnetoresistive memory devices and assembliesMICRON TECHNOLOGY INC·Filed 2002·Granted May 11, 2004·17 cites·41 claims
- 2074US7306954B2Process flow for building MRAM structuresMICRON TECHNOLOGY INC·Filed 2003·Granted Dec 11, 2007·17 cites·9 claims
- 2174US6933224B2Method of fabricating integrated circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Aug 23, 2005·15 cites·26 claims
- 2270US7932173B2Method of fabricating integrated circuitryMICRON TECHNOLOGY INC·Filed 2008·Granted Apr 26, 2011·3 cites·10 claims
- 2369US7330367B2Stacked 1T-nMTJ MRAM structureMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 12, 2008·5 cites·15 claims
- 2467US6780653B2Methods of forming magnetoresistive memory device assembliesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·6 cites·38 claims
- 2566US8592797B2Variable resistance memory device having reduced bottom contact area and method of forming the sameNEJAD HASAN·Filed 2012·Granted Nov 26, 2013·1 cites·8 claims
- 2666US7038286B2Magnetoresistive memory device assembliesMICRON TECHNOLOGY INC·Filed 2004·Granted May 2, 2006·6 cites·8 claims
- 2765US8426305B2Method of fabricating integrated circuitryNEJAD HASAN·Filed 2011·Granted Apr 23, 2013·1 cites·11 claims
- 2864US7183621B2MRAM memory cell having an electroplated bottom layerMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 27, 2007·6 cites·22 claims
- 2962US6781174B2Magnetoresistive memory device assembliesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·5 cites·8 claims
- 3060US7978491B2Stacked memory cell structure and method of forming such a structureMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 12, 2011·3 cites·20 claims
- 3155US9076888B2Silicided recessed siliconNEJAD HASAN·Filed 2006·Granted Jul 7, 2015·1 cites·18 claims
- 3254US6780654B2Methods of forming magnetoresistive memory device assembliesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·3 cites·14 claims
- 3352US8354661B2Variable resistance memory device having reduced bottom contact area and method of forming the sameMICRON TECHNOLOGY INC·Filed 2011·Granted Jan 15, 2013·0 cites·4 claims
- 3452US7279762B2Magnetoresistive memory device assemblies, and methods of forming magnetoresistive memory device assembliesMICRON TECHNOLOGY INC·Filed 2005·Granted Oct 9, 2007·0 cites·7 claims
- 3550US6791870B2Magnetoresistive memory devices and assemblies; and methods of storing and retrieving informationMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 14, 2004·4 cites·14 claims
- 3640US2007020774A1Methods of utilizing magnetoresistive memory constructionsNEJAD HASAN·Filed 2006·Application pending·0 cites
- 3737US2006171224A11T-nmemory cell structure and its method of formation and operationNEJAD HASAN·Filed 2006·Application pending·0 cites
- 3836US2005014297A1Methods of forming magnetoresistive memory devices and assembliesFiled 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →