Vapor phase deposition apparatus and vapor phase deposition method

Abstract

A vapor phase deposition apparatus includes a chamber, a support table which is accommodated in the chamber and supports a substrate in the chamber, a first passage which supplies a gas to form a film and is connected to the chamber, and a second passage which discharges the gas and is connected to the chamber, the support table is provided with a plurality of first projecting portions to constrain a substantially horizontal movement in the same direction as a substrate surface with respect to the substrate, and the substrate is supported on a surface to come in contact with a back face of the substrate.

1 . A vapor phase deposition apparatus comprising: 
 a chamber,    a support table disposed in the chamber and adapted to support a substrate in the chamber,    a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and    a second passage connected to the chamber and adapted to discharge the gas from the chamber,    wherein the support table includes a plurality of projecting portions to constrain substantially horizontal movement of the substrate within an area surrounded by the plurality of projecting portions, and a bottom face of the support table for supporting a back face of the substrate.    
     
     
         2 . The vapor phase deposition apparatus according to  claim 1 , wherein each of the projecting portions has a round shaped tip part.  
     
     
         3 . The vapor phase deposition apparatus according to  claim 1 , wherein each of the projecting portions has a spherical tip part.  
     
     
         4 . The vapor phase deposition apparatus according to  claim 1 , wherein the substrate is a wafer, and 
 the projecting portions are extended in a direction toward a center of the area surrounded by the projecting portions, and a length of each of the projecting portions in the direction toward the center of the area surrounded by the projecting portions is double or more of a thickness of a film to be formed on the wafer with the gas.    
     
     
         5 . The vapor phase deposition apparatus according to  claim 1 , wherein each of the projecting portions has a tip part which is adapted to constrain substantially horizontal movement of the substrate within the area surrounded by the projecting portions.  
     
     
         6 . The vapor phase deposition apparatus according to  claim 1 , wherein the substrate is a wafer, and 
 the projecting portions are formed to come in contact with a vertical midpoint area of a side surface of the wafer.    
     
     
         7 . The vapor phase deposition apparatus according to  claim 1 , wherein the substrate is a wafer, and 
 the projecting portions are formed to make a line contact with a side surface of the wafer.    
     
     
         8 . The vapor phase deposition apparatus according to  claim 1 , wherein the substrate is a wafer, and 
 the projecting portions are formed to make a point contact with a side surface of the wafer.    
     
     
         9 . A vapor phase deposition apparatus comprising: 
 a chamber,    a support table disposed in the chamber and adapted to support a substrate in the chamber,    a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and    a second passage connected to the chamber and adapted to discharge the gas from the chamber,    wherein the support table is provided with a ring adapted to constrain substantially horizontal movement of the substrate within an area surrounded by the ring.    
     
     
         10 . The vapor phase deposition apparatus according to  claim 9 , wherein the substrate is a wafer, and 
 the ring has a round shaped edge adapted to make a contact with a side surface of the wafer.    
     
     
         11 . A vapor phase deposition apparatus comprising: 
 a chamber,    a support table disposed in the chamber and adapted to support a substrate in the chamber,    a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and    a second passage connected to the chamber and adapted to discharge the gas from the chamber,    wherein the support table includes a first surface adapted to constrain substantially horizontal movement of the substrate, the first surface being formed to be round and projecting toward the substrate, and a second surface of the support table for supporting a back face of the substrate.    
     
     
         12 . The vapor phase deposition apparatus according to  claim 11 , wherein the substrate is a wafer, and 
 the first surface is formed to constrain the substantially horizontal movement of the wafer by making a contact with a side surface of the wafer.    
     
     
         13 . The vapor phase deposition apparatus according to  claim 11 , wherein the substrate is a wafer, and 
 the first surface is formed to come in contact with a vertical midpoint area of a side surface of the wafer.    
     
     
         14 . The vapor phase deposition apparatus according to  claim 11 , wherein the substrate is a wafer, and 
 the first surface is formed to make a line contact with a side surface of the wafer.    
     
     
         15 . The vapor phase deposition apparatus according to  claim 11 , wherein the substrate is a wafer, and 
 the first surface is formed to make a point contact with a side surface of the wafer.    
     
     
         16 . A vapor phase deposition apparatus comprising: 
 a chamber,    a support table disposed in the chamber and adapted to support a substrate in the chamber,    a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and    a second passage connected to the chamber and adapted to discharge the gas from the chamber,    wherein the support table includes a plurality of projecting portions each including a top face, selected ones of the top faces of the projecting portions for contacting and supporting the substrate.    
     
     
         17 . The vapor phase deposition apparatus according to  claim 16 , wherein the number of the projecting portions is three to ten.  
     
     
         18 . The vapor phase deposition apparatus according to  claim 16 , wherein each of the projecting portions has a height of 0.1 mm to 0.5 mm and a width of 0.5 mm to 3 mm.  
     
     
         19 . The vapor phase deposition apparatus according to  claim 16 , wherein the top face of each of the projecting portions has one of a flat shape and an arcuate shape, or includes multiple projections.  
     
     
         20 . A vapor phase deposition apparatus comprising: 
 a chamber,    a support table disposed in the chamber and adapted to support a substrate in the chamber,    a first passage connected to the chamber and adapted to supply gas to the chamber to form a film on the substrate, and    a second passage connected to the chamber and adapted to discharge the gas from the chamber,    wherein the support table includes a plurality of first projecting portions to constrain substantially horizontal movement of the substrate within an area surrounded by the first projecting portions, and a plurality of second projecting portions having top faces adapted to support the substrate thereon.    
     
     
         21 . A vapor phase deposition method using a vapor phase deposition apparatus in which a substrate mounted on a support table is accommodated in a chamber, and a first passage which supplies a gas to form a film and a second passage which discharges the gas are connected to the chamber, the method comprising: 
 rotating the support table including a plurality of projecting portions and constraining substantially horizontal movement of the substrate within an area surrounded by the plurality of projecting portions, while supporting a back face of the substrate with a bottom face portion of the support table; and    supplying the gas which forms a film from the first passage to carry out an epitaxial growth.    
     
     
         22 . A vapor phase deposition method using a vapor phase deposition apparatus in which a substrate mounted on a support table is accommodated in a chamber, and a first passage which supplies a gas to form a film and a second passage which discharges the gas are connected to the chamber, the method comprising: 
 rotating the support table including a ring and constraining substantially horizontal movement of the substrate within an area surrounded by the ring, while supporting a back face of the substrate with a bottom face portion of the support table; and    supplying the gas which forms a film from the first passage to carry out an epitaxial growth.    
     
     
         23 . A vapor phase deposition method using a vapor phase deposition apparatus in which a substrate mounted on a support table is accommodated in a chamber, and a first passage which supplies a gas to form a film and a second passage which discharges the gas are connected to the chamber, the method comprising: 
 rotating the support table including a first surface, which is formed to be round and projecting toward the substrate and constraining substantially horizontal movement of the substrate, while supporting a back face of the substrate with a second surface of the support table; and    supplying the gas which forms a film from the first passage to carry out an epitaxial growth.    
     
     
         24 . A vapor phase deposition method using a vapor phase deposition apparatus in which a substrate mounted on a support table is accommodated in a chamber, and a first passage which supplies a gas to form a film and a second passage which discharges the gas are connected to the chamber, the method comprising: 
 rotating the support table including a plurality of first projecting portions and constraining substantially horizontal movement of the substrate within an area surrounded by the plurality of first projecting portions, and a plurality of second projecting portions adapted to come in contact with the substrate, while supporting the substrate on top faces of the second projecting portions; and    supplying the gas which forms a film from the first passage to carry out an epitaxial growth.    
     
     
         25 . A support table adapted to be accommodated in a chamber of a vapor phase deposition apparatus to support a substrate on which a film is to be formed with gas that is supplied to the chamber, the support table comprising: 
 a holder; and    a plurality of projecting portions formed on the holder, the plurality of projecting portions defining an area surrounded by the plurality of projecting portions,    a surface of the holder being adapted to support a back face of the substrate, and substantially horizontal movement of a substrate being adapted to be constrained in the area surrounded by the plurality of projecting portions.