Mixed metal nitride and boride barrier layers

Abstract

Mixed metal aluminum nitride and boride diffusion barriers and electrodes for integrated circuits, particularly for DRAM cell capacitors. Also provided are methods for CVD deposition of M x Al y N z B w alloy diffusion barriers, wherein M is Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, or W; x is greater than zero; y is greater than or equal to zero; the sum of z and w is greater than zero; and wherein when y is zero, z and w are both greater than zero.

1 - 91 . (canceled)  
   
   
       92 . A method of depositing an amorphous alloy, comprising the steps of: 
 placing an object within a vapor deposition chamber;    injecting gaseous precursors of a metal, aluminum, nitrogen and boron into said chamber, wherein each of said gaseous precursors is transferred from a respective bubbler, each said respective bubbler and said chamber being at about a same pressure; and    depositing an amorphous alloy layer from said precursors on said object.    
   
   
       93 . The method of  claim 92 , wherein said metal precursor is titanium and a single gas serves as said metal precursor and said nitrogen precursor.  
   
   
       94 . The method of  claim 93 , wherein said metal and nitrogen precursor is of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of one or more of hydrogen, an alkyl group and an aryl group.  
   
   
       95 . The method of  claim 93 , wherein said metal and nitrogen precursor is Ti(N(CH 3 ) 2 ) 4 .  
   
   
       96 . The method of  claim 92 , wherein said wafer is heated to a temperature of approximately 250-550° C.  
   
   
       97 . The method of  claim 92 , wherein said aluminum precursor is selected from the group consisting of DMEAA, dimethylaluminumhydride ethyldimethylamine adduct, dimethyl aluminum hydride, an alkyl aluminum compound, an alkylaminealuminum compound, and any adducted complexes of the above-named aluminum-containing compounds.  
   
   
       98 . The method of  claim 92 , wherein said metal precursor is selected from the group consisting of tetrakisdiethylamidotitanium, bis(2,4-dimethyl)(1,3-pentadienyl)titanium, titanium tetrachloride, titanium tetrabromide, titanium tetraiodide, and cyclopentadienylcycloheptatrienyltitanium.  
   
   
       99 . The method of  claim 92 , wherein said metal precursor is selected from the group consisting of metal halide compounds and organometallic compounds.  
   
   
       100 . The method of  claim 92 , wherein said boron precursor is a boron reactant gas.  
   
   
       101 . The method of  claim 92 , wherein said nitrogen precursor is a nitrogen reactant gas.  
   
   
       102 . The method of  claim 92 , wherein said amorphous alloy layer comprises M x Al y N z B w , wherein M is said first metal, x, y and z are each greater than zero, and w is between about 0.35 and about 1.4.  
   
   
       103 . The method of  claim 92 , wherein said precursors are introduced into said chamber substantially simultaneously.  
   
   
       104 . A method of depositing a layer on a semiconductor wafer, comprising: 
 placing said wafer within a vapor deposition reactor;    heating said wafer to a temperature of about 250° C. to about 550° C.;    establishing a pressure of 100 millitorr to 10 torr within said reactor;    injecting a gaseous organometallic precursor from a first bubbler into said reactor;    injecting an aluminum precursor from a second bubbler into said reactor, said first bubbler and said second bubbler being at a pressure substantially the same as that within said reactor; and    depositing a layer comprising M x Al y N z B w , wherein M is a first metal, x, y and z are each greater than zero, and w is between about 0.35 and about 1.4.    
   
   
       105 . The method of  claim 104 , wherein said aluminum precursor is selected from the group consisting of DMEAA, dimethylaluminumhydride ethyldimethylamine adduct, dimethyl aluminum hydride, an alkyl aluminum compound, an alkylaminealuminum compound, and adducted complexes of any of the above-named aluminum-containing compounds.  
   
   
       106 . The method of  claim 104 , wherein said first metal is titanium and is deposited from a titanium precursor selected from the group consisting of tetrakisdiethylamidotitanium, bis(2,4-dimethyl)(1,3-pentadienyl)titanium, titanium tetrachloride, titanium tetrabromide, titanium tetraiodide, cyclopentadienylcycloheptatrienyltitanium, and a precursor of the formula Ti(NR 2 ), where R is selected from the group consisting of one or more of hydrogen, an alkyl group and an aryl group.  
   
   
       107 . The method of  claim 104 , wherein said organometallic precursor comprises titanium and nitrogen.  
   
   
       108 . The method of  claim 107 , wherein said organometallic precursor is Ti(N(CH 3 ) 2 ) 4 .  
   
   
       109 . The method of  claim 107 , wherein said organometallic precursor is of the formula Ti(NR 2 ) 4 , where R is selected from the group consisting of one or more of hydrogen, an alkyl group and an aryl group.  
   
   
       110 . The method of  claim 104 , wherein said aluminum precursor is selected from the group consisting of DMEAA, dimethylaluminumhydride ethyldimethylamine adduct, dimethyl aluminum hydride, an alkyl aluminum compound, an alkylaminealuminum compound, and any adducted complexes of the above-named aluminum-containing compounds.  
   
   
       111 . The method of  claim 104 , wherein said selected organometallic precursor is selected from the group consisting of tetrakisdiethylamidotitanium, bis(2,4-dimethyl)(1,3-pentadienyl)titanium, titanium tetrachloride, titanium tetrabromide, titanium tetraiodide, and cyclopentadienylcycloheptatrienyltitanium.  
   
   
       112 . The method of  claim 104 , wherein said organometallic precursor is selected from the group consisting of metal halide compounds and organometallic compounds.  
   
   
       113 . The method of  claim 104 , wherein said boron is included in said layer comprising M x Al y N z B w  by utilizing a boron reactant gas.  
   
   
       114 . The method of  claim 104  wherein said nitrogen is included in said layer comprising M x Al y N z B w  by utilizing a nitrogen reactant gas.  
   
   
       115 . The method of  claim 104 , wherein said precursors are introduced into said reactor substantially simultaneously.