US2007048999A1PendingUtilityA1

Method for fabricating semiconductor component having conductors and bonding pads with wire bondable surfaces and selected thickness

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Individually held — no corporate assignee on recordPriority: Jun 25, 2002Filed: Nov 2, 2006Published: Mar 1, 2007
Est. expiryJun 25, 2022(expired)· nominal 20-yr term from priority
Inventors:Warren M. Farnworth
H10W 72/551H10W 74/00H10W 90/22H10W 72/865H10W 72/5434H10W 90/754H10W 90/756H10W 72/952H10W 72/29H10W 72/59H10W 72/923H10W 72/951H10W 72/075H10W 72/07511H10W 72/07251H10W 72/252H10W 72/222H10W 72/012H10W 72/20H10W 72/01251H10W 72/01231H10W 72/01225H10W 90/736H10W 72/019H10W 70/635H10W 70/415H10W 74/129H10W 70/698H10W 72/90
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Claims

Abstract

A method for fabricating a semiconductor component includes the step of providing a semiconductor die having a die contact and at least one integrated circuit in electrical communication with the die contact. The method also includes the steps of forming a first polymer layer on the die, forming a conductor on the polymer layer in electrical communication with the die contact, and forming a wire bonding pad on the conductor. The method also includes the steps of forming a metal layer on the wire bonding pad configured to form the wire bonding pad with a selected thickness, forming a non-oxidizing metal layer on the metal layer, and then wire bonding a wire to the wire bonding pad.

Claims

exact text as granted — not AI-modified
1 . A method for fabricating a semiconductor component comprising: 
 providing a semiconductor die comprising a die contact and at least one integrated circuit in electrical communication with the die contact;    forming a first polymer layer on the die;    forming a conductor on the polymer layer in electrical communication with the die contact;    forming a wire bonding pad on the conductor;    forming a metal layer on the wire bonding pad configured to form the wire bonding pad with a selected thickness;    forming a non-oxidizing metal layer on the first metal layer; and    wire bonding a wire to the wire bonding pad.    
     
     
         2 . The method of  claim 1  further comprising forming a second polymer layer on the conductor and the wire bonding pad having an opening aligned with the wire bonding pad.  
     
     
         3 . The method of  claim 1  wherein the forming the metal layer step and the forming the non-oxidizing metal layer step comprise electroless deposition.  
     
     
         4 . The method of  claim 1  wherein the forming the metal layer step forms the conductor with the selected thickness.  
     
     
         5 . A method for fabricating a semiconductor component comprising: 
 providing a semiconductor die including a circuit side, a plurality of integrated circuits, and at least one die contact on the circuit side in electrical communication with at least one integrated circuit;    forming a first polymer layer on the circuit side;    forming a conductor on the first polymer layer in electrical communication with the die contact having a wire bonding pad;    forming a metal layer on the wire bonding pad configured to adjust a thickness of the wire bonding pad;    forming a non-oxidizing layer on the metal layer to provide a wire bondable surface; and    wire bonding to the wire bonding pad.    
     
     
         6 . The method of  claim 5  further comprising forming a second polymer layer on the conductor and the wire bonding pad having an opening aligned with the wire bonding pad.  
     
     
         7 . The method of  claim 5  wherein the thickness of the wire bonding pad is selected to achieve an electrical characteristic for the wire bonding pad.  
     
     
         8 . The method of  claim 5  further comprising forming the metal layer on the conductor.  
     
     
         9 . The method of  claim 8  wherein the thickness of the metal layer is selected to achieve a second electrical characteristic for the conductor.  
     
     
         10 . The method of  claim 5  wherein the non-oxidizing layers comprise a metal selected from the group consisting of Au, Pt and Pd.  
     
     
         11 . The method of  claim 5  wherein the metal layer comprises a metal selected from the group consisting of Ni, V, Cr, CrCu and Cu.  
     
     
         12 . The method of  claim 5  wherein the forming the metal layer step comprises electroless deposition.  
     
     
         13 . The method of  claim 5  wherein the forming the conductor step comprises forming a seed layer and then electrolessly depositing a second metal layer on the seed layer.  
     
     
         14 . A method for fabricating a semiconductor component comprising: 
 providing a semiconductor die including a circuit side, a plurality of integrated circuits, and at least one die contact on the circuit side in electrical communication with at least one integrated circuit;    forming a first polymer layer on the circuit side;    forming a conductor on the first polymer layer in electrical communication with the die contact having a wire bonding pad;    forming a metal layer on the conductor and on the wire bonding pad configured to adjust a thickness and an electrical characteristic of the conductor and the wire bonding pad;    forming a second polymer layer on the conductor and the wire bonding pad having an opening aligned with the wire bonding pad    forming a non-oxidizing layer on the metal layer to provide a wire bondable surface; and    wire bonding to the wire bonding pad.    
     
     
         15 . The method of  claim 14  wherein the first polymer layer and the second polymer layer comprise a low k material.  
     
     
         16 . The method of  claim 14  wherein the non-oxidizing layer seals edges of the wire bonding pad.  
     
     
         17 . The method of  claim 14  wherein the non-oxidizing layer seals edges of the conductor.  
     
     
         18 . The method of  claim 14  further comprising forming a metal bump on the die contact, and the forming the conductor step forms the conductor in electrical communication with the bump.  
     
     
         19 . The method of  claim 14  wherein the metal layer comprises electrolessly deposited nickel.  
     
     
         20 . The method of  claim 14  wherein the non-oxidizing layer comprises an electrolessly deposited noble metal.

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