Method and apparatus for thermally processing microelectronic workpieces

Abstract

An apparatus for thermally processing a microelectronic workpiece is provided. The apparatus comprises a rotatable carousel assembly configured to support at least one workpiece. A driver is coupled to the carousel assembly and rotates the carousel assembly, moving the workpiece between a loading station, a heating station and a cooling station. The loading, heating and cooling stations are radially positioned and approximately equally spaced about a center axis of the carousel assembly. The heating station includes a heating element and an actuator for moving the heating element into thermal engagement with the workpiece in the heating station. The cooling station includes a cooling element and an actuator for moving the cooling element into thermal engagement with the workpiece in the cooling station. A process fluid distribution manifold for delivering process fluid to the workpieces at each station extends through a central opening in the carousel assembly. A non-oxidizing gas is delivered through the manifold to create an oxygen free environment during the thermal process.

1 . An apparatus for thermally processing a semiconductor workpiece, the apparatus comprising: 
 a chamber having a cover connected to a base, the base having a heating element that defines a heating station and a cooling element that defines a cooling station;    a semiconductor workpiece receiver moveably mounted to the chamber, the receiver configured to move the semiconductor workpiece between the heating station and the cooling station.    
   
   
       2 . The thermal processing apparatus of  claim 1 , wherein the receiver has a central portion that is mounted to the base, and wherein the receiver moves angularly about the central portion.  
   
   
       3 . The thermal processing apparatus of  claim 1 , wherein the semiconductor workpiece and the heating station are brought into thermal contact for processing.  
   
   
       4 . The thermal processing apparatus of  claim 3 , wherein after receiver moves from the heating station, the semiconductor workpiece and the cooling station are brought into thermal contact for additional processing.  
   
   
       5 . The thermal processing apparatus of  claim 1 , wherein the chamber includes a process fluid distribution system that supplies process fluid to the semiconductor workpiece to remove impurities.  
   
   
       6 . The thermal processing apparatus of  claim 1 , wherein the cover includes an opening for loading of the semiconductor workpiece.  
   
   
       7 . The thermal processing apparatus of  claim 6 , wherein the cover includes a second opening for unloading of the semiconductor workpiece.  
   
   
       8 . The thermal processing apparatus of  claim 1 , wherein the receiver has opposed segments with a tab that engages and supports the semiconductor workpiece during movement between the heating and cooling stations.  
   
   
       9 . The thermal processing apparatus of  claim 8 , wherein the opposed segments have a curvilinear inner periphery and the tab extends inward from said periphery.  
   
   
       10 . The thermal processing apparatus of  claim 8 , wherein the receiver has a rib that defines an uppermost surface of the receiver, and wherein the semiconductor workpiece resides between the tabs and the uppermost rib surface during movement between the heating and cooling station.  
   
   
       11 . An annealing chamber for thermally processing a semiconductor workpiece, the annealing chamber comprising: 
 a cover;    a base having a heating element and a cooling element;    a receiver operably connected to the base, the receiver having a first external segment and a second external segment, wherein the first and second external segments each have at least one tab that engages a peripheral extent of the semiconductor workpiece;    wherein the receiver moves the semiconductor workpiece between a first position wherein the workpiece is in thermal contact with the heating element, and a second position wherein the workpiece is in thermal contact with the cooling element.    
   
   
       12 . The annealing chamber of  claim 11 , wherein the semiconductor workpiece is positioned a distance above both the heating element and the cooling element when loaded into the receiver, and wherein at the first position said distance is reduced to achieve the thermal contact with the heating element.  
   
   
       13 . The annealing chamber of  claim 12 , wherein after the receiver moves the semiconductor workpiece from the first position to the second position, said distance is reduced to achieve the thermal contact with the cooling element.  
   
   
       14 . The annealing chamber of  claim 11 , wherein the chamber includes a process fluid distribution system that supplies process fluid to the semiconductor workpiece to remove impurities.  
   
   
       15 . The annealing chamber of  claim 11 , wherein the cover includes an opening for loading and unloading of the semiconductor workpiece.  
   
   
       16 . The annealing chamber of  claim 11 , wherein the first and second external segments have a curvilinear inner periphery and the tab extends inward from said periphery.  
   
   
       17 . The annealing chamber of  claim 11 , wherein the heating element includes an upper portion with vacuum channels that supply vacuum air to maintain said thermal contact between the semiconductor workpiece and the heating element in the first position.  
   
   
       18 . The annealing chamber of  claim 11 , wherein the heating element includes a plurality of depressions along an outer periphery of the element, the depressions being positioned and dimensioned to receive the tabs of the receiver when the semiconductor workpiece is in thermal contact with the heating element.  
   
   
       19 . The annealing chamber of  claim 11 , wherein the heating element includes an internal electric resistive heater for processing of the workpiece in the first position.  
   
   
       20 . The annealing chamber of  claim 11 , wherein the cooling element includes an upper portion with vacuum channels that supply vacuum air to maintain said thermal contact between the semiconductor workpiece and the cooling element in the second position.  
   
   
       21 . The annealing chamber of  claim 11 , wherein the cooling element includes a plurality of depressions along an outer periphery of the element, the depressions being cooperatively positioned and dimensioned to receive the tabs of the receiver when the semiconductor workpiece is in thermal contact with the cooling element.  
   
   
       22 . The annealing chamber of  claim 11 , wherein the cooling element includes an arrangement of internal channels that circulate a fluid to cool the workpiece in the second position.  
   
   
       23 . A semiconductor workpiece processing module comprising: 
 a support stand;    a first annealing chamber and a second annealing chamber stacked within the support stand, the first and second annealing chambers each having:    a base with a heating element and a cooling element;    a receiver operably connected to the base, the receiver having a first external segment with a pair of tabs that engage a peripheral extent of the semiconductor workpiece;    the receiver being moveable between a first position wherein the semiconductor workpiece is in thermal contact with the heating element, and a second position wherein the semiconductor workpiece is in thermal contact with the cooling element.    
   
   
       24 . The processing module of  claim 23 , wherein each annealing chamber includes a process fluid distribution system that supplies process fluid to the semiconductor workpiece to remove impurities.  
   
   
       25 . The processing module of  claim 23 , wherein each annealing chamber includes a cover joined to the base, wherein the cover includes an opening for loading and unloading of the semiconductor workpiece.  
   
   
       26 . The processing module of  claim 23 , wherein the first external segment of the receiver has a curvilinear inner periphery and the tabs extend inward from said periphery.  
   
   
       27 . The processing module of  claim 23 , wherein the heating element has an upper portion that includes: 
 vacuum channels that supply vacuum air to maintain said thermal contact between the semiconductor workpiece and the heating element in the first position; and,    a plurality of depressions along an outer periphery of the element, the depressions being positioned and dimensioned to receive the tabs of the receiver when the semiconductor workpiece is in thermal contact with the heating element.    
   
   
       28 . The processing module of  claim 23 , wherein the heating element includes an internal electric resistive heater for processing of the workpiece in the first position.  
   
   
       29 . The processing module of  claim 23 , wherein the cooling element has an upper portion that includes: 
 vacuum channels that supply vacuum air to maintain said thermal contact between the semiconductor workpiece and the cooling element in the second position; and,    a plurality of depressions along an outer periphery of the element, the depressions being cooperatively positioned and dimensioned to receive the tabs of the receiver when the semiconductor workpiece is in thermal contact with the cooling element.    
   
   
       30 . The processing module of  claim 23 , wherein the cooling element includes an arrangement of internal channels that circulate a fluid to cool the workpiece in the second position.