Metal cations for initiating polishing

Abstract

The invention provides compositions and methods for planarizing or polishing a metal surface. The composition comprises an abrasive, cesium ions, and a liquid carrier comprising water.

1 . A chemical-mechanical polishing composition for polishing of a substrate, comprising: 
 (a) about 0.05 wt. % to about 2 wt. % of an abrasive, based on the total weight of the polishing composition,    (b) about 0.5 to about 50 mmol/kg of cesium ions, based on the total weight of the composition, and    (c) a liquid carrier comprising water.    
     
     
         2 . The chemical-mechanical polishing composition of  claim 1 , wherein the cesium ions are present in an amount of about 3 mmol/kg to about 30 mmol/kg, based on the total weight of the composition.  
     
     
         3 . The chemical-mechanical polishing composition of  claim 1 , wherein the cesium ions are obtained by the dissolution in the water of a compound selected from the group consisting of cesium chloride, cesium iodide, cesium bromide, cesium carbonate, cesium nitrate, and cesium sulfate.  
     
     
         4 . The chemical-mechanical polishing composition of  claim 1 , wherein the abrasive is present in an amount of about 0.1 wt. % to about 0.75 wt. %, based on the total weight of the polishing composition.  
     
     
         5 . The chemical-mechanical polishing composition of  claim 4 , wherein the abrasive is present in an amount of about 0.2 wt. % to about 0.5 wt. %, based on the total weight of the polishing composition.  
     
     
         6 . The chemical-mechanical polishing composition of  claim 1 , wherein the abrasive is a metal oxide.  
     
     
         7 . The chemical-mechanical polishing composition of  claim 5 , wherein the abrasive is selected from the group consisting of silica, alumina, ceria, zirconia, and mixtures thereof.  
     
     
         8 . The chemical-mechanical polishing composition of  claim 6 , wherein the abrasive is silica.  
     
     
         9 . The chemical-mechanical polishing composition of  claim 1 , wherein the composition has a pH of about 8 to about 14.  
     
     
         10 . The chemical-mechanical polishing composition of  claim 8 , wherein the composition has a pH of about 9 to about 12.  
     
     
         11 . The chemical-mechanical polishing composition of  claim 1 , further comprising an oxidizing agent for at least a portion of the substrate.  
     
     
         12 . The chemical-mechanical polishing composition of  claim 10 , wherein the oxidizing agent is selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, monoperoxy sulfate, monoperoxy sulfite, monoperoxyphosphate, monoperoxyhypophosphate, monoperoxypyrophosphate, organo-halo-oxy compounds, periodates, permanganate, peroxyacetic acid, benzoquinones, naphthoquinones, anthraquinones, thionines, indigos, and mixtures thereof.  
     
     
         13 . The method of chemically-mechanically polishing a substrate, comprising: 
 (a) providing a substrate,    (b) contacting the substrate with a polishing pad and a chemical-mechanical polishing composition comprising: 
 (i) about 0.05 wt. % to about 2 wt. % of an abrasive, based on the total weight of the polishing composition,  
 (ii) about 0.5 to about 50 mmol/kg of cesium ions, based on the total weight of the polishing composition, and  
 (iii) a liquid carrier comprising water,  
   (c) moving the polishing pad relative to the substrate with the chemical-mechanical polishing composition therebetween, and    (d) abrading at least a portion of the substrate to polish the substrate.    
     
     
         14 . The method of  claim 13 , wherein the cesium ions are present in an amount of about 3 mmol/kg to about 30 mmol/kg, based on the total weight of the polishing composition.  
     
     
         15 . The method of  claim 13 , wherein the cesium ions are obtained by dissolution in the water of a compound selected from the group consisting of cesium chloride, cesium iodide, cesium carbonate, cesium nitrate, and cesium sulfate.  
     
     
         16 . The method of  claim 13 , wherein the abrasive is present in an amount of about 0.1 wt. % to about 0.75 wt. %, based on the total weight of the polishing composition.  
     
     
         17 . The method of  claim 16 , wherein the abrasive is present in an amount of about 0.2 wt. % to about 0.5 wt. %, based on the total weight of the polishing composition.  
     
     
         18 . The method of  claim 13 , wherein the abrasive is a metal oxide.  
     
     
         19 . The method of  claim 16 , wherein the abrasive is selected from the group consisting of silica, alumina, ceria, zirconia, and mixtures thereof.  
     
     
         20 . The method of  claim 17 , wherein the abrasive is silica.  
     
     
         21 . The method of  claim 13 , wherein the composition has a pH of about 8 to about 14.  
     
     
         22 . The method of  claim 20 , wherein the composition has a pH of about 9 to about 12.  
     
     
         23 . The method of  claim 13 , further comprising an oxidizing agent for at least a portion of the substrate.  
     
     
         24 . The method of  claim 21 , wherein the oxidizing agent is selected from the group consisting of bromates, bromites, chlorates, chlorites, hydrogen peroxide, hypochlorites, iodates, monoperoxy sulfate, monoperoxy sulfite, monoperoxyphosphate, monoperoxyhypophosphate, monoperoxypyrophosphate, organo-halo-oxy compounds, periodates, permanganate, peroxyacetic acid, benzoquinones, naphthoquinones, anthraquinones, thionines, indigos, and mixtures thereof.