Inventor · disambiguated record
Shoutian Li
Also filed as: LI SHOUTIAN
17 granted patents·7 pending applications·106 citations·filing 1999–2022
92Inventor score
Files withCABOT MICROELECTRONICS CORP9ANJI MICROELECTRONICS SHANGHAI CO LTD4LI SHOUTIAN4ANJI MICROELECTRONICS TECH SHANGHAI CO LTD2ETHYL CORP2
Top patents by PatentIndex Score
24 records- 0193US8252687B2Barrier slurry for low-k dielectricsLI SHOUTIAN·Filed 2009·Granted Aug 28, 2012·29 cites·46 claims
- 0290US9028572B2Polishing composition and method utilizing abrasive particles treated with an aminosilaneGRUMBINE STEVEN·Filed 2008·Granted May 12, 2015·14 cites·7 claims
- 0388US9951054B2CMP porous pad with particles in a polymeric matrixLI SHOUTIAN·Filed 2010·Granted Apr 24, 2018·15 cites·20 claims
- 0480US8591763B2Halide anions for metal removal rate controlLI SHOUTIAN·Filed 2007·Granted Nov 26, 2013·4 cites·22 claims
- 0579US11034862B2Polishing composition and method utilizing abrasive particles treated with an aminosilaneCABOT MICROELECTRONICS CORP·Filed 2019·Granted Jun 15, 2021·1 cites·7 claims
- 0679US6255261B1(Meth) acrylate copolymer pour point depressantsETHYL CORP·Filed 1999·Granted Jul 3, 2001·33 cites·16 claims
- 0778US7820067B2Halide anions for metal removal rate controlCABOT MICROELECTRONICS CORP·Filed 2006·Granted Oct 26, 2010·6 cites·12 claims
- 0871US9617450B2Polishing composition and method utilizing abrasive particles treated with an aminosilaneCABOT MICROELECTRONICS CORP·Filed 2015·Granted Apr 11, 2017·1 cites·5 claims
- 0969US8529680B2Compositions for CMP of semiconductor materialsDE REGE THESAURO FRANCESCO·Filed 2010·Granted Sep 10, 2013·2 cites·25 claims
- 1062US7803203B2Compositions and methods for CMP of semiconductor materialsCABOT MICROELECTRONICS CORP·Filed 2007·Granted Sep 28, 2010·1 cites·25 claims
- 1159US10508219B2Polishing composition and method utilizing abrasive particles treated with an aminosilaneCABOT MICROELECTRONICS CORP·Filed 2016·Granted Dec 17, 2019·0 cites·10 claims
- 1252US12365814B2Chemical mechanical polishing solutionANJI MICROELECTRONICS SHANGHAI CO LTD·Filed 2020·Granted Jul 22, 2025·0 cites·4 claims
- 1351US12404423B2Chemical-mechanical polishing liquidANJI MICROELECTRONICS SHANGHAI CO LTD·Filed 2020·Granted Sep 2, 2025·0 cites·12 claims
- 1450US7998228B2Tantalum CMP compositions and methodsCABOT MICROELECTRONICS CORP·Filed 2006·Granted Aug 16, 2011·0 cites·20 claims
- 1550US2007068087A1Metal cations for initiating polishingCABOT MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
- 1649US2009124173A1Compositions and methods for ruthenium and tantalum barrier cmpCABOT MICROELECTRONICS CORP·Filed 2007·Application pending·0 cites
- 1749US2025059401A1Chemical mechanical polishing solution and usage method thereofANJI MICROELECTRONICS SHANGHAI CO LTD·Filed 2022·Application pending·0 cites
- 1848US12264266B2Chemical mechanical polishing liquidANJI MICROELECTRONICS TECH SHANGHAI CO LTD·Filed 2020·Granted Apr 1, 2025·0 cites·7 claims
- 1948US8551202B2Iodate-containing chemical-mechanical polishing compositions and methodsLI SHOUTIAN·Filed 2006·Granted Oct 8, 2013·0 cites·7 claims
- 2048US2025034430A1Method for preparing organic-inorganic nanocomposite particle dispersion liquid, organic-inorganic nanocomposite particle dispersion liquid, and chemical mechanical polishing solutionANJI MICROELECTRONICS SHANGHAI CO LTD·Filed 2022·Application pending·0 cites
- 2147US2023027829A1Chemical mechanical polishing solutionANJI MICROELECTRONICS TECH SHANGHAI CO LTD·Filed 2020·Application pending·0 cites
- 2246US2003131527A1Alkyl-substituted aryl polyalkoxylates and their use in fuelsETHYL CORP·Filed 2002·Application pending·0 cites
- 2345US8637404B2Metal cations for initiating polishingCARTER PHILLIP W·Filed 2010·Granted Jan 28, 2014·0 cites·6 claims
- 2442US2007249167A1CMP method for copper-containing substratesCABOT MICROELECTRONICS CORP·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →