Nitride-based semiconductor device and method of fabricating the same

Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

1 - 27 . (canceled)  
   
   
       28 . A nitride-based semiconductor device comprising: 
 a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and    an n-side electrode formed on the back surface of said first semiconductor layer, wherein    a thickness of said first semiconductor layer is not more than 180 μm, and contact resistance between said n-side electrode and said first semiconductor layer is not more than 0.05 Ωcm 2 .    
   
   
       29 . The nitride-based semiconductor device according to  claim 28 , wherein 
 a thickness of said first semiconductor layer is set to not more than 180 μm by mechanical polishing.    
   
   
       30 . The nitride-based semiconductor device according to  claim 28 , wherein 
 a dislocation density is not more than 1×10 9  cm −2  in the vicinity of the back surface of said first semiconductor layer.    
   
   
       31 . The nitride-based semiconductor device according to  claim 28 , wherein 
 a dislocation density is not more than 1×10 6  cm −2  in the vicinity of the back surface of said first semiconductor layer.    
   
   
       32 . The nitride-based semiconductor device according to  claim 28 , wherein 
 the back surface of said first semiconductor layer includes a nitrogen face of said first semiconductor layer.    
   
   
       33 . The nitride-based semiconductor device according to  claim 28 , wherein 
 said first semiconductor layer includes said n-type nitride-based semiconductor layer or said nitride-based semiconductor substrate consisting of at least one material selected from a group consisting of GaN, BN, AlN, InN and TlN.    
   
   
       34 . The nitride-based semiconductor device according to  claim 28 , wherein 
 said n-side electrode includes an Al film.    
   
   
       35 . The nitride-based semiconductor device according to  claim 28 , wherein 
 said nitride-based semiconductor device is a nitride-based semiconductor light-emitting device.    
   
   
       36 . A nitride-based semiconductor device comprising: 
 a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and    an n-side electrode formed in contact with the back surface of said first semiconductor layer, wherein    a thickness of said first semiconductor layer is not more than 180 μm, and a dislocation density is not more than 1×10 9  cm −2  in the vicinity of the back surface of said first semiconductor layer.    
   
   
       37 . A nitride-based semiconductor device comprising: 
 a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate; and    an n-side electrode formed in contact with the back surface of said first semiconductor layer, wherein    a thickness of said first semiconductor layer is thinned by mechanical polishing, and a dislocation density is not more than 1×10 9  cm −2  in the vicinity of the back surface of said first semiconductor layer.