Inventor · disambiguated record
Yasuhiko Nomura
Also filed as: NOMURA YASUHIKO
54 granted patents·28 pending applications·528 citations·filing 1995–2012
98Inventor score
Top patents by PatentIndex Score
82 records- 0196US6977953B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Dec 20, 2005·50 cites·56 claims
- 0295US6720196B2Nitride-based semiconductor element and method of forming nitride-based semiconductorSANYO ELECTRIC CO·Filed 2002·Granted Apr 13, 2004·97 cites·26 claims
- 0391US7376166B2Semiconductor laser apparatus and optical pickup apparatusSANYO ELECTRIC CO·Filed 2006·Granted May 20, 2008·16 cites·11 claims
- 0489US7486712B2Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatusSANYO ELECTRIC CO·Filed 2006·Granted Feb 3, 2009·11 cites·19 claims
- 0588US6791120B2Nitride-based semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2003·Granted Sep 14, 2004·28 cites·14 claims
- 0688US6649942B2Nitride-based semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2002·Granted Nov 18, 2003·68 cites·26 claims
- 0782US6130446AElectrode of n-type nitridide semiconductor, semiconductor device having the electrode, and method of fabricating the sameSANYO ELECTRIC CO·Filed 1998·Granted Oct 10, 2000·51 cites·18 claims
- 0881US6891871B1Semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 2000·Granted May 10, 2005·36 cites·18 claims
- 0980US7116693B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2005·Granted Oct 3, 2006·4 cites·16 claims
- 1074US7916766B2Semiconductor laser device and manufacturing method thereofSANYO ELECTRIC CO·Filed 2009·Granted Mar 29, 2011·5 cites·20 claims
- 1174US7518204B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2006·Granted Apr 14, 2009·4 cites·12 claims
- 1273US6734503B2Nitride-based semiconductor elementSANYO ELECTRIC CO·Filed 2002·Granted May 11, 2004·16 cites·32 claims
- 1372US7450622B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Granted Nov 11, 2008·2 cites·9 claims
- 1470US7372077B2Semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted May 13, 2008·9 cites·24 claims
- 1570US6954478B2Nitride-based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2003·Granted Oct 11, 2005·7 cites·22 claims
- 1669US7453102B2Nitride-based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2005·Granted Nov 18, 2008·2 cites·2 claims
- 1768US7405096B2Manufacturing method of nitride semiconductor device and nitride semiconductor deviceSANYO ELECTRIC CO·Filed 2005·Granted Jul 29, 2008·2 cites·25 claims
- 1868US6890779B2Nitride-based semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2004·Granted May 10, 2005·7 cites·19 claims
- 1967US7567605B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2006·Granted Jul 28, 2009·3 cites·17 claims
- 2067US7561610B2Semiconductor laser apparatus and optical apparatusSANYO ELECTRIC CO·Filed 2005·Granted Jul 14, 2009·3 cites·16 claims
- 2167US6743702B2Nitride-based semiconductor laser device and method of forming the sameSANYO ELECTRIC CO·Filed 2002·Granted Jun 1, 2004·13 cites·38 claims
- 2267US5534336AFabric superior in anti-drape stiffness, stiffness and soft handle, and manufacture thereofTOYO BOSEKI·Filed 1995·Granted Jul 9, 1996·14 cites·3 claims
- 2366US7817694B2Semiconductor laser apparatus and manufacturing method thereofSANYO ELECTRIC CO·Filed 2005·Granted Oct 19, 2010·3 cites·20 claims
- 2466US7589357B2Semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Granted Sep 15, 2009·1 cites·3 claims
- 2560US7088755B2Nitride-base semiconductor laser deviceSANYO ELECTRIC CO·Filed 2003·Granted Aug 8, 2006·5 cites·11 claims
- 2659US7769069B2Integrated semiconductor laser diode module and manufacturing method of the sameSANYO ELECTRIC CO·Filed 2005·Granted Aug 3, 2010·1 cites·9 claims
- 2759US6771676B2Semiconductor laser device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2002·Granted Aug 3, 2004·5 cites·16 claims
- 2858US8334577B2Semiconductor deviceKANO TAKASHI·Filed 2009·Granted Dec 18, 2012·1 cites·7 claims
- 2958US6744075B2Nitride-based semiconductor light-emitting device and method of forming the sameSANYO ELECTRIC CO·Filed 2002·Granted Jun 1, 2004·7 cites·21 claims
- 3057US6956884B1Semiconductor light emitting deviceSANYO ELECTRIC CO·Filed 2000·Granted Oct 18, 2005·7 cites·7 claims
- 3156US7807490B2Manufacturing method of nitride semiconductor device and nitride semiconductor deviceSANYO ELECTRIC CO·Filed 2008·Granted Oct 5, 2010·0 cites·11 claims
- 3256US6914922B2Nitride based semiconductor light emitting device and nitride based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2001·Granted Jul 5, 2005·6 cites·11 claims
- 3355US7629623B2Nitride-based semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2008·Granted Dec 8, 2009·0 cites·26 claims
- 3455US2009010292A1Nitride-based semiconductor laser deviceSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 3554US8098699B2Semiconductor laser apparatus and optical apparatusINOUE DAIJIRO·Filed 2009·Granted Jan 17, 2012·1 cites·6 claims
- 3654US7924898B2Nitride based semiconductor laser device with oxynitride protective coatings on facetsSANYO ELECTRIC CO·Filed 2008·Granted Apr 12, 2011·0 cites·8 claims
- 3754US7485902B2Nitride-based semiconductor light-emitting deviceSANYO ELECTRIC CO·Filed 2003·Granted Feb 3, 2009·5 cites·22 claims
- 3854US6967985B2Surface emission semiconductor laser deviceSANYO ELECTRIC CO·Filed 2003·Granted Nov 22, 2005·3 cites·16 claims
- 3954US6768755B2Semiconductor laser deviceSANYO ELECTRIC CO·Filed 2000·Granted Jul 27, 2004·3 cites·25 claims
- 4053US8098704B2Semiconductor laser apparatus, method of manufacturing semiconductor laser apparatus, and optical pickup apparatusHATA MASAYUKI·Filed 2009·Granted Jan 17, 2012·0 cites·4 claims
- 4153US7209505B2Nitride-based semiconductor light-emitting device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2006·Granted Apr 24, 2007·0 cites·3 claims
- 4253US2010111130A1Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 4352US8519416B2Method of fabricating nitride-based semiconductor light-emitting device and nitride-based semiconductor light-emitting deviceKANO TAKASHI·Filed 2009·Granted Aug 27, 2013·0 cites·11 claims
- 4452US6891872B1Semiconductor laser device and method of manufacturing the sameSANYO ELECTRIC CO·Filed 2000·Granted May 10, 2005·4 cites·7 claims
- 4552US2008069162A1Nitride-based semiconductor device and method of fabricating the sameTODA TADAO·Filed 2007·Application pending·0 cites
- 4652US2008130698A1Nitride-based semiconductor device and method of fabricating the sameSANYO ELECTRIC CO·Filed 2007·Application pending·0 cites
- 4752US2007235750A1Nitride-based semiconductor device and method of fabricating the sameTODA TADAO·Filed 2007·Application pending·0 cites
- 4852US2008067541A1Nitride-based semiconductor device and method of fabricating the sameTODA TADAO·Filed 2007·Application pending·0 cites
- 4952US2008179601A1Nitride-based semiconductor device and method of fabricating the sameTODA TADAO·Filed 2007·Application pending·0 cites
- 5051US6778575B2AlGaInP-based high-output red semiconductor laser deviceSANYO ELECTRIC CO·Filed 2002·Granted Aug 17, 2004·2 cites·15 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →