Nitride-based semiconductor device and method of fabricating the same

Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

1 - 27 . (canceled)  
     
     
         28 . A nitride-based semiconductor laser device comprising: 
 a substrate made from an n-type nitride-based semiconductor;    nitride-based semiconductor layers including an n-type layer, an active layer and a p-type layer formed on an upper surface of said substrate;    a p-side electrode formed on said p-type layer; and    an n-side electrode formed on a back surface of said substrate, wherein    said nitride-based semiconductor layers have cavity facets formed by cleavage, and    a dislocation density is not more than 1×10 9  cm −2  in the vicinity of said back surface of said substrate.    
     
     
         29 . The nitride-based semiconductor laser device according to  claim 28 , wherein 
 said nitride-based semiconductor layers are formed on a Ga face of said substrate, and    said n-side electrode is formed on a nitrogen face of said substrate.    
     
     
         30 . The nitride-based semiconductor laser device according to  claim 28 , wherein 
 a thickness of said substrate is not less than 120 μm and not more than 180 μm.    
     
     
         31 . The nitride-based semiconductor laser device according to  claim 28 , wherein 
 said dislocation density is not more than 1×10 6  cm −2  in the vicinity of said back surface of said substrate.