Nitride-based semiconductor device and method of fabricating the same

Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

1 - 27 . (canceled)  
     
     
         28 . A nitride-based semiconductor device comprising: 
 a substrate made from an n-type nitride-based semiconductor formed by using growth on a substrate for growth; and    an n-side electrode formed on a back surface of said substrate, wherein    a dislocation density is not more than 1×10 9  cm −2  in the vicinity of the interface between said substrate and said n-side electrode.    
     
     
         29 . The nitride based semiconductor device according to  claim 28 , wherein 
 said substrate is thinned by processing the back surface thereof.    
     
     
         30 . (canceled)  
     
     
         31 . (canceled)  
     
     
         32 . (canceled)  
     
     
         33 . (canceled)