Nitride-based semiconductor device and method of fabricating the same

Abstract

A method of fabricating a nitride-based semiconductor device capable of reducing contact resistance between a nitrogen face of a nitride-based semiconductor substrate or the like and an electrode is provided. This method of fabricating a nitride-based semiconductor device comprises steps of etching the back surface of a first semiconductor layer consisting of either an n-type nitride-based semiconductor layer or a nitride-based semiconductor substrate having a wurtzite structure and thereafter forming an n-side electrode on the etched back surface of the first semiconductor layer.

1 - 27 . (canceled) 
   
   
       28 . A nitride-based semiconductor device comprising:
 a substrate consisting of an n-type nitride-based semiconductor;   nitride-based semiconductor layers including an n-type layer, an active layer and a p-type layer formed on an upper surface of said substrate;   a p-side electrode formed on said p-type layer; and   an n-side electrode formed on a back surface of said substrate, wherein   a thickness of said substrate is not more than 180 μm, and   a dislocation density of said back surface on which said n-side electrode is formed is not more than 1×10 9  cm −2 .   
   
   
       29 . The nitride-based semiconductor device according to  claim 28 , wherein
 said nitride-based semiconductor layers are formed on a Ga face of said substrate, and   said n-side electrode is formed on a nitrogen face of said substrate.   
   
   
       30 . The nitride-based semiconductor device according to  claim 28 , wherein
 said dislocation density of said back surface of said substrate is not more than 1×10 6  cm −2 .