Dielectric material forming methods and enhanced dielectric materials

Abstract

A dielectric material forming method includes forming a first monolayer and forming a second monolayer on the first monolayer, one of the first and second monolayers comprising tantalum and oxygen and the other of the first and second monolayers comprising oxygen and another element different from tantalum. A dielectric layer can be formed containing the first and second monolayers. The dielectric layer can exhibit a dielectric constant greater than the first monolayer. The another element can include a Group IB to VIIIB element, such as titanium and/or zirconium. The forming of the first and second monolayer can include atomic layer depositing. A dielectric material can include first and second chemisorbed materials, the second material containing oxygen and a Group IB to VIIIB element and the dielectric material exhibiting a dielectric constant greater than the first chemisorbed material. The dielectric material can further exhibit less current leakage than the first material.

1 - 50 . (canceled)  
   
   
       51 . A dielectric material forming method comprising: 
 forming a first monolayer;    forming a second monolayer on the first monolayer, one of the first and second monolayers comprising tantalum and oxygen and the other of the first and second monolayers comprising oxygen and zirconium; and    forming a dielectric layer comprising the first and second monolayers with 5-15% of the dielectric layer being oxygen and zirconium that is provided as in the other of the first and second monolayers, the dielectric layer exhibiting a dielectric constant greater than the first monolayer and second monolayer.    
   
   
       52 . The method of  claim 51  wherein the first monolayer comprises tantalum and oxygen.  
   
   
       53 . The method of  claim 51  wherein the second monolayer comprises tantalum and oxygen.  
   
   
       54 . The method of  claim 51  wherein the first monolayer comprises tantalum pentoxide.  
   
   
       55 . The method of  claim 51  wherein the other of the first and second monolayers consists of oxygen and zirconium.  
   
   
       56 . The method of  claim 51  further comprising annealing the dielectric layer.  
   
   
       57 . The method of  claim 51  wherein the forming of the first or second monolayer comprises atomic layer depositing.  
   
   
       58 . A dielectric layer comprising a first monolayer comprising tantalum and oxygen and a second monolayer comprising oxygen and zirconium with 5-15% of the dielectric layer being oxygen and zirconium that is provided as in the second monolayer, the dielectric layer exhibiting a dielectric constant greater than the first monolayer and second monolayer.  
   
   
       59 . The dielectric of  claim 58  wherein the first monolayer comprises tantalum pentoxide.  
   
   
       60 . The dielectric of  claim 58  wherein the second monolayer consists of oxygen and zirconium.  
   
   
       61 . A dielectric material forming method comprising: 
 atomic layer depositing alternated monolayers of a first dielectric material consisting of tantalum and oxygen, a second dielectric material consisting of zirconium and oxygen, and a third dielectric material consisting of titanium and oxygen over a substrate; and    providing fewer monolayers of the second material compared to the first material with 8-10% of the monolayers being monolayers of the second material and 5-15% of the monolayers being monolayers of the third material; and    annealing the monolayers, the annealed dielectric material exhibiting a dielectric constant greater than the first material and second material and less current leakage than the first material.    
   
   
       62 . The method of  claim 61  wherein 10% of the monolayers are monolayers of the second material and 8% of the monolayers are monolayers of the third material.  
   
   
       63 . An enhanced dielectric material comprising alternated, atomic layer deposited monolayers of a first dielectric material consisting of tantalum and oxygen, a second dielectric material consisting of zirconium and oxygen, and a third dielectric material consisting of titanium and oxygen over a substrate, the enhanced dielectric material containing fewer monolayers of the second material compared to the first material with 8-10% of the monolayers being monolayers of the second material, 5-15% of the monolayers being monolayers of the third material, and the enhanced dielectric material exhibiting a dielectric constant greater than the first material and second material and less current leakage than the first material.  
   
   
       64 . The dielectric of  claim 63  wherein 10% of the monolayers are monolayers of the second material and 8% of the monolayers are monolayers of the third material.