Method of forming silicon-on-insulator (soi) semiconductor substrate and soi semiconductor substrate formed thereby

Abstract

A silicon-on-insulator (SOI) semiconductor substrate includes a semiconductor substrate, a buried oxide layer formed on the semiconductor substrates an SOI layer formed on the buried oxide layer, and a diffusion barrier layer interposed between the buried oxide layer and the SOI layer, wherein the diffusion barrier layer is an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.

1 . A silicon-on-insulator (SOI) semiconductor substrate comprising: 
 a semiconductor substrate;    a buried oxide layer formed on the semiconductor substrate;    an SOI layer formed on the buried oxide layer, and    a diffusion barrier layer interposed between the buried oxide layer and the SOI layer, wherein the diffusion barrier layer is an insulating layer having a lower impurity diffusion coefficient as compared with the buried oxide layer.    
   
   
       2 . The SOI semiconductor substrate as claimed in  claim 1 , wherein the buried oxide layer is silicon oxide formed by thermal oxidation or CVD.  
   
   
       3 . The SOI semiconductor substrate as claimed in  claim 1 , further comprising a buffer insulating layer interposed between the SOI layer and diffusion barrier layer.  
   
   
       4 . The SOI semiconductor substrate as claimed in  claim 3 , wherein the buffer insulating layer is silicon oxide formed by thermal oxidation or CVD.  
   
   
       5 . The SOI semiconductor substrate as claimed in  claim 1 , wherein the diffusion barrier layer is the insulating layer having a lower boron diffusion coefficient as compared with the buried oxide layer.  
   
   
       6 . The SOI semiconductor substrate as claimed in  claim 1 , wherein the diffusion barrier layer comprises one of a silicon nitride layer or a silicon oxynitride layer.  
   
   
       7 . The SOI semiconductor substrate as claimed in  claim 1 , wherein the SOI layer is an epitaxial layer composed of a single crystalline structure.