Apparatus and method for single substrate processing using megasonic-assisted drying

Abstract

In a method for treating a semiconductor substrate, a single substrate is positioned in a single-substrate process chamber and subjected to wet etching, cleaning and/or drying steps. The single substrate may be exposed to etch or clean chemistry in the single-substrate processing chamber as turbulence is induced in the etch or clean chemistry to thin the boundary layer of fluid attached to the substrate. Megasonic energy and/or disturbances in the chamber surfaces may provide the turbulence for boundary layer thinning. According to another aspect of a method according to the present invention, megasonic energy may be directed into a region within the single-substrate process chamber to create a zone of boundary layer thinning across the substrate surface, and a single substrate may be translated through the zone during a rinsing or cleaning process within the chamber to optimize cleaning/rinsing performance within the zone.

1 . An apparatus for treating at least one substrate, comprising: 
 a chamber having an opening in an upper portion of the chamber, wherein the opening is sized to receive the at least one substrate, and a processing region proportioned to receive the at least one substrate, wherein the processing region has a lower interior portion and an upper interior portion;    means for causing turbulent flow, wherein the means for causing turbulent flow is coupled to the chamber in one or both of the lower interior region and the upper interior region;    an inlet and an outlet coupled to the chamber and in fluid communication with the lower portion of the chamber; and    an upper overflow weir and a lower overflow weir positioned at an elevation below the upper overflow weir.    
   
   
       2 . The apparatus of  claim 1 , further comprising an end effector.  
   
   
       3 . The apparatus of  claim 1 , wherein the means for causing turbulent flow comprises a megasonic transducer.  
   
   
       4 . The apparatus of  claim 3 , wherein the megasonic transducer is oriented to propogate energy in a direction normal to the substrate surface.  
   
   
       5 . The apparatus of  claim 3 , wherein the megasonic transducer is oriented to propagate energy at an angle that is less than normal to the substrate surface.  
   
   
       6 . The apparatus of  claim 1 , further including a source of heated gas fluidly coupled to the chamber to volatize fluid from a surface of a substrate.  
   
   
       7 . The apparatus of  claim 6 , further including one or more inlets in the chamber for introduction of the heated gas into the chamber, and an end effector having a substrate-receiving portion moveable to translate a substrate past the inlets to accelerate evaporation.  
   
   
       8 . The apparatus of  claim 1 , further comprising a vapor exhaust system for exhausting drying vapor from the system.  
   
   
       9 . The apparatus of  claim 1 , wherein the chamber is proportioned to process only one substrate at a time.  
   
   
       10 . The apparatus of  claim 1 , wherein the source of process fluid is fluidly coupled to the lower portion of the chamber, and wherein the source of process fluid is moveable away from the lower portion.  
   
   
       11 . The apparatus of  claim 1 , wherein the upper and lower overflow weirs have three ports coupled thereto.  
   
   
       12 . An apparatus for treating at least one substrate, comprising: 
 a chamber having an opening in an upper portion of the chamber, wherein the opening is sized to receive the at least one substrate, and a processing region proportioned to receive the at least one substrate, wherein the processing region has a lower interior portion and an upper interior portion;    means for causing turbulent flow, wherein the means for causing turbulent flow is coupled to the chamber in one or both of the lower interior region and the upper interior region;    an inlet and an outlet coupled to the chamber and in fluid communication with the lower portion of the chamber;    one or more overflow weirs; and    three ports coupled with the one or more overflow weirs.    
   
   
       13 . The apparatus of  claim 12 , further comprising an end effector.  
   
   
       14 . The apparatus of  claim 12 , wherein the means for causing turbulent flow comprises a megasonic transducer.  
   
   
       15 . The apparatus of  claim 14 , wherein the megasonic transducer is oriented to propogate energy in a direction normal to the substrate surface.  
   
   
       16 . The apparatus of  claim 12 , wherein the chamber is proportioned to process only one substrate at a time.  
   
   
       17 . The apparatus of  claim 12 , wherein the source of process fluid is fluidly coupled to the lower portion of the chamber, wherein the source is moveable away from the lower portion.  
   
   
       18 . The apparatus of  claim 12 , further including a source of heated gas fluidly coupled to the chamber to volatize fluid from a surface of a substrate.  
   
   
       19 . The apparatus of  claim 18 , further including one or more inlets in the chamber for introduction of the heated gas into the chamber, and an end effector having a substrate-receiving portion moveable to translate a substrate past the inlets to accelerate evaporation.  
   
   
       20 . The apparatus of  claim 18 , further comprising a vapor exhaust system for exhausting drying vapor from the system.