US2007134124A1PendingUtilityA1

Sputter target and method for fabricating sputter target including a plurality of materials

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Assignee: HERAEUS INCPriority: Jul 23, 2002Filed: Jan 19, 2007Published: Jun 14, 2007
Est. expiryJul 23, 2022(expired)· nominal 20-yr term from priority
Inventors:Wenjun Zhang
B22F 2003/153B22F 3/15C22C 38/12B22F 2998/10C22C 38/02C22C 19/007C22C 19/07C22C 38/002C22C 38/10C22C 19/03C22C 27/06C22C 38/06C23C 14/3414C22C 5/04
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Claims

Abstract

A sputter target comprises a plurality of materials. The plurality of materials includes at least a first material and a second material. The first material is comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe). The second material is comprised of carbon (C), a carbide, a nitrogen (N)-containing material, a nitride, a silicide, an oxygen (O)-containing material, an oxide, boron (B), or a boride. The second material has an average size of between 0.01 microns and 50 microns or is not more than 50 microns in size. In one embodiment, the first material comprises at least 15 atomic percent or greater.

Claims

exact text as granted — not AI-modified
1 . A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of carbon (C), a nitrogen (N)-containing material, a carbide, a nitride, or a silicide, the second material having an average size of between 0.01 microns and 50 microns, the first material comprising at least 15 atomic percent or greater.  
     
     
         2 . The sputter target of  claim 1 , wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).  
     
     
         3 . The sputter target of  claim 1 , wherein the second material has an average size between 0.1 microns and 10 microns.  
     
     
         4 . The sputter target of  claim 1 , wherein the second material has an average size between 1 micron and 5 microns.  
     
     
         5 . The sputter target of  claim 1 , wherein the second material has an average size less than 2 microns.  
     
     
         6 . The sputter target of  claim 1 , wherein the second material is comprised of a carbide or a nitride of an element from the Periodic Table of elements shown in column VIIIA or column IB.  
     
     
         7 . The sputter target of  claim 1 , wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element alloyed material, or a cobalt-refractory element alloyed material.  
     
     
         8 . The sputter target of  claim 7 , wherein the sputter target comprises grains of the plurality of materials.  
     
     
         9 . A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material having an average size of between 0.01 microns and 50 microns.  
     
     
         10 . The sputter target of  claim 9 , wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).  
     
     
         11 . The sputter target of  claim 9 , wherein the second material has an average size between 0.1 microns and 10 microns.  
     
     
         12 . The sputter target of  claim 9 , wherein the second material has an average size between 1 micron and 5 microns.  
     
     
         13 . The sputter target of  claim 9 , wherein the second material has an average size less than 2 microns.  
     
     
         14 . The sputter target of  claim 9 , wherein the second material is comprised of an oxide of an element from the Periodic Table of elements shown in column VIIIA or column IB.  
     
     
         15 . The sputter target of  claim 9 , wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element alloyed material, or a cobalt-refractory element alloyed material.  
     
     
         16 . The sputter target of  claim 9 , wherein the sputter target comprises grains of the plurality of materials.  
     
     
         17 . The sputter target of  claim 9 , wherein the second material is comprised of silicon dioxide (SiO 2 ).  
     
     
         18 . The sputter target of  claim 9 , wherein the sputter target is comprised of Co, Cr, Pt and SiO 2 .  
     
     
         19 . A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of an oxygen (O)-containing material or an oxide, the second material having a size of between 0.01 microns and 50 microns, 
 wherein if the sputter target consists of chromium (Cr) and the oxygen (O)-containing material only, the oxygen (O)-containing material is an oxygen (O)-containing material other than simply chromium oxide, and    wherein if the sputter target consists of chromium (Cr) and the oxide only, the oxide is an oxide other than simply chromium oxide.    
     
     
         20 . The sputter target of  claim 19 , wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).  
     
     
         21 . The sputter target of  claim 19 , wherein the second material has an average size between 0.1 microns and 10 microns.  
     
     
         22 . The sputter target of  claim 19 , wherein the second material has an average size between 1 micron and 5 microns.  
     
     
         23 . The sputter target of  claim 19 , wherein the second material has an average size less than 2 microns.  
     
     
         24 . The sputter target of  claim 19 , wherein the second material is comprised of an oxide of an element from the Periodic Table of elements shown in column VIIIA or column IB.  
     
     
         25 . The sputter target of  claim 19 , wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element alloyed material, or a cobalt-refractory element alloyed material.  
     
     
         26 . The sputter target of  claim 19 , wherein the sputter target comprises grains of the plurality of materials.  
     
     
         27 . The sputter target of  claim 19 , wherein the second material is comprised of silicon dioxide (SiO 2 ).  
     
     
         28 . The sputter target of  claim 19 , wherein if the sputter target consists of chromium (Cr) and the oxygen (O)-containing material only, the oxygen (O)-containing material is an oxygen (O)-containing material other than simply chromium oxide or simply silicon dioxide (SiO 2 ), and 
 wherein if the sputter target consists of chromium (Cr) and the oxide only, the oxide is an oxide other than simply chromium oxide or simply silicon dioxide (SiO 2 ).    
     
     
         29 . A sputter target comprising a plurality of materials, the plurality of materials including at least a first material and a second material, the first material comprised of cobalt (Co), chromium (Cr), ruthenium (Ru), nickel (Ni), or iron (Fe), the second material comprised of boron (B) or a boride, the second material not more than 50 microns in size.  
     
     
         30 . The sputter target of  claim 29 , wherein the plurality of materials includes a third material, the third material comprised of platinum (Pt) or tantalum (Ta).  
     
     
         31 . The sputter target of  claim 29 , wherein the second material is less than 10 microns in size.  
     
     
         32 . The sputter target of  claim 29 , wherein the second material is less than 2 microns in size.  
     
     
         33 . The sputter target of  claim 29 , wherein the plurality of materials further includes a third material comprised of a transition element, a refractory element, a cobalt-transition element alloyed material, or a cobalt-refractory element alloyed material.  
     
     
         34 . The sputter target of  claim 30 , wherein the sputter target comprises grains of the plurality of materials.  
     
     
         35 . The sputter target of  claim 30 , wherein the second material is comprised of boron (B).

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